Evaluation of anisotropic thermoelectric power of ReSi1.75

Gu, Jiajun; Inui, Haruyuki; Oh, Myung‐Hwan; Wee, Dang-Moon

doi:10.1016/j.physb.2006.07.018

Cited by 9 publications

(5 citation statements)

References 12 publications

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“…The σ value of Bi 2 Si 2 Te 6 increased with increasing temperature, starting at 673 K, suggesting that Bi 2 Si 2 Te 6 shows nondegenerate conduction characteristics. The n-like shape of the curve for the Seebeck coefficient can be attributed to bipolar conduction, which can be expressed using the following eq where S p , S n , σ p , and σ n are the Seebeck coefficients of holes and electrons and electrical conductivities of holes and electrons, respectively . When the electron concentration is comparable to that of holes owing to thermal excitation, the magnitude of the Seebeck coefficient decreases because S n compensates S p .…”

Section: Resultsmentioning

confidence: 99%

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Comparative Study of Thermoelectric Properties of Sb₂Si₂Te₆ and Bi₂Si₂Te₆

Jang

Abbey

Frimpong

et al. 2022

ACS Appl. Mater. Interfaces

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Charge carrier transport and corresponding thermoelectric properties are often affected by several parameters, necessitating a thorough comparative study for a profound understanding of the detailed conduction mechanism. Here, as a model system, we compare the electronic transport properties of two layered semiconductors, Sb 2 Si 2 Te 6 and Bi 2 Si 2 Te 6 . Both materials have similar grain sizes and morphologies, yet their conduction characteristics are significantly different. We found that phase boundary scattering can be one of the main factors for Bi 2 Si 2 Te 6 to experience significant charge carrier scattering, whereas Sb 2 Si 2 Te 6 is relatively unaffected by the phenomenon. Furthermore, extensive point defect scattering in Sb 2 Si 2 Te 6 significantly reduces its lattice thermal conductivity and results in high zT values across a broad temperature range. These findings provide novel insights into electron transport within these materials and should lead to strategies for further improving their thermoelectric performance.

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Section: Resultsmentioning

confidence: 99%

“…where S p , S n , σ p , and σ n are the Seebeck coefficients of holes and electrons and electrical conductivities of holes and electrons, respectively. 42 When the electron concentration is comparable to that of holes owing to thermal excitation, the magnitude of the Seebeck coefficient decreases because S n compensates S p .…”

Section: Resultsmentioning

confidence: 99%

Comparative Study of Thermoelectric Properties of Sb₂Si₂Te₆ and Bi₂Si₂Te₆

Jang

Abbey

Frimpong

et al. 2022

ACS Appl. Mater. Interfaces

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“…This behavior could also be the origin of the temperature dependence of the Seebeck coefficient. The Seebeck coefficient for bipolar transport can be described according to the following expression , where the subscripts e and h denote electrons and holes, respectively. The increased contribution of minority carriers should decrease the total Seebeck coefficient.…”

Section: Results and Discussionmentioning

confidence: 99%

Method of Efficient Ag Doping for Fermi Level Tuning of Thermoelectric Bi_0.5Sb_1.5Te₃ Alloys Using a Chemical Displacement Reaction

et al. 2015

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Silver is a well-known element for use as a p-type dopant in Bi 2 Te 3 -related compounds. In this paper, an efficient method for incorporating ultra-low Ag dopant concentrations (< 1,300 ppm) into Bi 0.5 Sb 1.5 Te 3 via a simple chemical displacement reaction is described. Powders of Bi 0.5 Sb 1.5 Te 3 synthesized by mechanical alloying were reacted with Ag + ions in dilute HNO 3 solutions (pH 0.2), resulting in the deposition of Ag on the surface of the powders due to the difference in reduction potential between Ag and Bi 0.5 Sb 1.5 Te 3 . The Ag/Bi 0.5 Sb 1.5 Te 3 powders were then sintered by SPS, and the thermoelectric properties of the dense Ag-doped samples were measured. Low Ag-doped samples showed behavior characteristic of partially degenerate semiconductors, while highly-doped specimens exhibited properties associated with fully degenerate semiconductors. From the measured transport properties and theoretical estimations, successful tuning of the Fermi level with Ag was confirmed. Consequently, the temperature at which the peak dimensionless figure of merit (ZT) value was obtained increased from 50 °C to 250 °C. Such findings may be beneficial in the utilization of waste heat over a wide temperature range, as the Ag-doped samples could be employed as functionally graded materials for thermoelectric modules.

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“…This can also be explained by the relatively low Fermi level of BS+TW ( Figure 5). The dependence of Seebeck coefficient on minority carriers can be expressed as [23,34,35]…”

Section: A N U S C R I P Tmentioning

confidence: 99%