Evaluation of BBr2+ and B++Br+ implants in silicon

Experimental apparatus for investigation of sputtering and secondary ion emission induced by energetic ion beams

“…Ion implantation and sputtering are now widely used in many technological applications. Low energy ion implantation technology1–6 is used, for example, in the case of formation of shallow high‐doped junctions in MOSFET devices or structural modification of polymer films; the implanted ion energy is varied in such cases between a few hundreds of eV to a few tens of keV. Medium ion implantation energies, which may be assumed to range up to hundreds of keV, are widely used in the doping of semiconductors during fabrication of ultralarge‐scale integrated (ULSI) circuits,7 formation of nanoparticles,8 or improving the tribological properties of materials 9.…”