Evaluation of CCl4 and CS2 as carbon doping sources in MBE growth of GaN

Armitage, R.; Yang, Qing; Feick, H.; Weber, E. R.

doi:10.1016/j.jcrysgro.2003.11.091

Cited by 11 publications

(11 citation statements)

References 22 publications

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“…In addition to these observations, several arguments were presented in ref. 11 supporting the hypothesis that the active dopant concentration is much lower than the carbon concentration measured by SIMS. One such argument was the precipitation of graphite in heavily doped GaN layers, as was also found in an independent study.…”

Section: B Defect Model For the Carbon-related Blue Luminescencesupporting

confidence: 72%

“…Among the semi-insulating GaN:C layers the free carrier concentration is not a significant factor affecting the PL efficiency, as samples with higher electrical resistivity also exhibited higher PL efficiency. 11 The introduction of additional structural defects with carbon doping cannot be ruled out completely, but there was no degradation in x-ray rocking curves or surface morphology for doping levels up to the low 10 19 cm -3 . 11 Thus in addition to the optically active BL and YL 12 defects, carbon probably also introduces non-radiative point defects or complexes at high doping levels.…”

Section: A Link Between the 286 Ev Emission Band And Carbon Defectsmentioning

confidence: 94%

“…Details of the MBE growth and material characterization have been published elsewhere. 11 The sample set also included a semi-insulating MOVPE GaN layer supplied by Emcore (Somerset, NJ). This sample was prepared by a conventional low-pressure MOVPE process and exhibited a carbon concentration of 3×10 17 cm -3 .…”

Section: Methodsmentioning

confidence: 99%

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Analysis of the carbon-related “blue” luminescence in GaN

Armitage

Yang

Weber

2005

Journal of Applied Physics

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The properties of a broad 2.86 eV photoluminescence band in carbon-doped GaN were studied as a function of C-doping level, temperature, and excitation density. The results are consistent with a C Ga -C N deep donor-deep acceptor recombination mechanism as proposed by Seager et al. For GaN:C grown by molecular-beam epitaxy (MBE) the 2.86 eV band is observed in Si co-doped layers exhibiting high n-type conductivity as well as in semi-insulating material. For low excitation density (4 W/cm 2 ) the 2.86 eV band intensity decreases as a function of cw-laser exposure time over a period of many minutes. The transient behavior is consistent with a model based on carrier diffusion and charge trapping-induced Coulomb barriers. The temperature dependence of the blue luminescence below 150 K was different for carbon-contaminated GaN grown by metalorganic vapor phase epitaxy (MOVPE) compared to C-doped MBE GaN.

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Section: B Defect Model For the Carbon-related Blue Luminescencesupporting

confidence: 72%

Section: A Link Between the 286 Ev Emission Band And Carbon Defectsmentioning

confidence: 94%

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Analysis of the carbon-related “blue” luminescence in GaN

Armitage

Yang

Weber

2005

Journal of Applied Physics

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“…Other dopants reported for MBE, halide vapor phase epitaxy, or metal organic vapor phase epitaxy are tetrabromomethane (CBr 4 ), 19,20 acetylene (C 2 H 2 ), 21 propane (C 3 H 8 ), 22 hydrogen cyanide (HCN), 23 carbon disulfide (CS 2 ), and carbon tetrachloride (CCl 4 ). 24 However, no thorough comparative investigation of carbon doping efficiency in GaN using different hydrocarbons has been published. Also, very few theoretical calculations regarding hydrocarbon doping efficiency studies have been performed.…”

Section: Introductionmentioning

confidence: 99%

Precursors for carbon doping of GaN in chemical vapor deposition

Danielsson

Pedersen

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested in 3 ] have been investigated as precursors for intentional carbon doping of (0001) GaN in chemical vapor deposition. The carbon precursors were studied by comparing the efficiency of carbon incorporation in GaN together with their influence on morphology and structural quality of carbon doped GaN. The unsaturated hydrocarbons C 2 H 4 and C 2 H 2 were found to be more suitable for carbon doping than the saturated ones, with higher carbon incorporation efficiency and a reduced effect on the quality of the GaN epitaxial layers. The results indicate that the C 2 H 2 molecule as a direct precursor, or formed by the gas phase chemistry, is a key species for carbon doping without degrading the GaN quality; however, the CH 3 species should be avoided in the carbon doping chemistry.

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“…Because the (1-101) GaN surface is terminated by nitrogen, the carbon might be easily incorporated as an acceptor by replacing the nitrogen atom [5]. Optical spectra of a C-doped (1-101)GaN suggests the presence of a shallow acceptor level [6], which is in contrast to a C-doped (0001)GaN [7]. But theoretical results so far suggest that carbon creates a deep level around 200 meV, and the acceptor level due to carbon is still to be studied.…”

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confidence: 99%

DAP emission band in a carbon doped (1‐101)GaN grown on (001)Si substrate

Honda

Hikosaka

Yamaguchi

et al. 2009

Phys. Status Solidi (c)

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Optical spectra of a C‐doped (1‐101) GaN are investigated via time resolved photoluminescence spectroscopy. Samples with different C‐doping levels were prepared by metalorganic vapour phase epitaxy using C2H2 as the doping precursor. A carbon related emission peak is identified at 375 nm which shows typical behaviours for a donor‐acceptor‐pair emission band. The acceptor level is estimated to be 190 meV which is at 43 meV shallower than that in an Mg doped GaN. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Evaluation of CCl4 and CS2 as carbon doping sources in MBE growth of GaN

Cited by 11 publications

References 22 publications

Analysis of the carbon-related “blue” luminescence in GaN

Analysis of the carbon-related “blue” luminescence in GaN

Precursors for carbon doping of GaN in chemical vapor deposition

DAP emission band in a carbon doped (1‐101)GaN grown on (001)Si substrate

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