Evaluation of Cd1–x
 Zn
 x
 S as electron transport layer in superstrate and inverted configurations of Sb2Se3 solar cells with n-i-p structure

Ayala-Mató, F.; Vigil‐Galán, O.; Seuret-Jiménez, D.; Courel, Maykel; Fernández, S.

doi:10.1088/1361-6641/abc7d0

Cited by 12 publications

(7 citation statements)

References 30 publications

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“…We have seen above that a relatively low doping of the Sb 2 Se 3 absorber does not affect the electrical parameters, which is in agreement with the results of Ayala-Mató et al [58]. The use of an n-i-p structure compensates this low doping concentration of the Sb 2 Se 3 absorber.…”

Section: Impact Of the Hole Transport Materials Layersupporting

confidence: 92%

Performance enhancement of Sb2Se3-based solar cell with hybrid buffer layer and MoSe2 as a hole transport material using simulator device

Ngoupo

Ndjaka

2022

Discov Mechanical Engineering

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In this work, we first compared the experimental and simulated J-V characteristics of the Sb2Se3-based solar cell without and with a hybrid buffer layer using SCAPS-1D software. The introduction of a second buffer layer reduces the current leakage caused at the front contact of the solar cell and the power conversion efficiency (PCE) increases from 3.75% to 5.18%; and the use of the ternary compound cadmium zinc sulfide (CdZnS), as an alternative electron transport layer (ETL) to the traditional cadmium sulfide (CdS), increases the PCE from 5.18% to 7.13%. Thereafter, different thicknesses of the SnO2/CdZnS hybrid buffer layer were simulated, and the optimization resulted in a value of 50 nm, with thicknesses of 10 nm and 40 nm for the SnO2 and CdZnS layers respectively. Furthermore, the optimization of the Sb2Se3 absorber allows to obtain a bulk defect density of 1011 cm−3 and a carrier capture cross section of 10–14 cm2. Finally, the low doping problem of the absorber is solved by forming a MoSe2 layer at the Sb2Se3/Mo interface. MoSe2 acts as a hole transport material (HTM) and is used for high mobility of charge carriers within it; moreover, its presence improves the performance of the Sb2Se3-based solar cell and a PCE of 18.77% (JSC = 34.37 mA/cm2, VOC = 660 mV, FF = 82.78%) is obtained. Our simulation results also show that the n-i-p configuration of the Sb2Se3-based solar cell is more stable.

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Section: Impact Of the Hole Transport Materials Layersupporting

confidence: 92%

Performance enhancement of Sb2Se3-based solar cell with hybrid buffer layer and MoSe2 as a hole transport material using simulator device

Ngoupo

Ndjaka

2022

Discov Mechanical Engineering

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“…A suitable selection of ETL could enhance solar cell performance [85,86]. The thickness and carrier concentration of the ETL also have a considerable impact on the device performance [87]. The photovoltaic parameters of the designed PSC were observed by varying the thickness and carrier concentration of the CeO x ETL from 100 to 800 nm and 10 17 to 10 21 cm −3 , respectively.…”

Section: Optimization Of Thickness and Carrier Concentration Of Ceox Etlmentioning

confidence: 99%

Design and simulation of a high-performance CH₃NH₃Pb(I_1–xCl_x)₃-based perovskite solar cell using a CeO_x electron transport layer and NiO hole transport layer

Ahmmed

Aktar

Rahman

et al. 2021

Semicond. Sci. Technol.

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Herein, a novel planar heterostructure (ITO/CeOx/CH3NH3Pb(I1–xClx)3/NiO/Au) of a CH3NH3Pb(I1–xClx)3-based perovskite solar cell has been designed and numerically investigated. CH3NH3Pb(I1–xClx)3 has been introduced as an absorber layer due to its excellent thermal stability and high carrier diffusion length. Inorganic CeOx and NiO have been introduced as an electron transport layer (ETL) and hole transport layer (HTL), respectively, as their role in the enhancement of efficiency and stability of other perovskite-based solar cells has already been proven. The influences of different physical parameters of the CH3NH3Pb(I1–xClx)3 absorber layer, NiO HTL, and CeOx ETL on the device performance have been explored. The investigated results indicate that the thickness and carrier concentration of the CH3NH3Pb(I1–xClx)3 has a massive impact on solar cell performance. A considerable impact of the carrier concentration of the CeOx and NiO on device performance has also been observed. The role of CH3NH3Pb(I1–xClx)3-layer deep-level defects, CeOx/CH3NH3Pb(I1–xClx)3 interface defects, series resistance, and back contact work functionon solar cell performance were also studied. The optimized solar cell exhibited a power conversion efficiency of 26.05% with open-circuit voltage (V OC), short-circuit current density (J SC), and fill factor of 1.082 V, 29.41 mA cm−2, and 81.85%, respectively. This research indicates that the designed heterostructure of solar cells may appear as a viable alternative to manufacturing CH3NH3Pb(I1–xClx)3 high-performance perovskites.

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“…The numerical simulation of the Sb 2 Se 3 solar cells was performed using SCAPS [15]. Performance parameters are obtained by solving Poisson's equation, electron continuity equation, and continuity equation, as previously described [14]. Table 1 summarize the semiconductor layer parameters and Table 2 those related to the interfaces.…”

Section: Structures and Device Simulation Parametersmentioning

confidence: 99%

“…Recently, the authors have studied the impact on the e ciency of Sb 2 Se 3 solar cells, replacing CdS with Cd 1 − x Zn x S in n-i-p structures [14]. In the simulation process the parameters were carefully selected in order to obtain an approach as realistic as possible.…”

Section: Introductionmentioning

confidence: 99%

Analysis of The Efficiency In Sb2Se3 Thin-Film Solar Cells Using Alternative Buffer Layers In n-p and n-i-p Structures By Numerical Simulation.

Ayala-Mató

Vigil‐Galán

Courel

et al. 2021

Preprint

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Antimony Sulfide (Sb2Se3) Solar Cells are considered a promising emerging photovoltaic devices technology. However, the best reported experimental efficiency (9.2%) is well below the theoretical limit of 30%. In this research is demonstrated, by numerical simulation, that using different buffer or electron transport layers (ETL) and device structures (n-p or n-i-p) can significantly increase the solar cell performance. The study is based on two underlying considerations: the use of inorganic materials to facilitate the manufacturing process and the analysis of the simulation parameters that adjust to the experimental conditions in which the cells can be processed. In the n-p structures, the use of single layers and bilayers as ETL was evaluated and the possible mechanism that explain the electrical parameters of the solar cell were discussed. Especial attention was made in the role of interfacial state density and band alignment in the ETL/Sb2Se3 interface. In addition, the n-i-p structure was studied by adding a hole transport layer (HTL). An improvement in open circuit voltage (Voc) is observed compared with n-p structure. Finally, the behavior of Voc and efficiency vs thickness of the ETL and Sb2Se3 layers was analyzed. The results show that using alternative ETLs a significant improve in Voc and efficiency could be achieved for n-p and n-i-p structures. After thickness optimization and taking account a moderate interface defect density, values of Voc and efficiency higher than 600 mV and 15 % were respectively obtained.

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Evaluation of Cd_1–xZn _x S as electron transport layer in superstrate and inverted configurations of Sb₂Se₃ solar cells with n-i-p structure

Cited by 12 publications

References 30 publications

Performance enhancement of Sb2Se3-based solar cell with hybrid buffer layer and MoSe2 as a hole transport material using simulator device

Performance enhancement of Sb2Se3-based solar cell with hybrid buffer layer and MoSe2 as a hole transport material using simulator device

Design and simulation of a high-performance CH₃NH₃Pb(I_1–xCl_x)₃-based perovskite solar cell using a CeO_x electron transport layer and NiO hole transport layer

Analysis of The Efficiency In Sb2Se3 Thin-Film Solar Cells Using Alternative Buffer Layers In n-p and n-i-p Structures By Numerical Simulation.

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Evaluation of Cd1–x Zn x S as electron transport layer in superstrate and inverted configurations of Sb2Se3 solar cells with n-i-p structure

Cited by 12 publications

References 30 publications

Performance enhancement of Sb2Se3-based solar cell with hybrid buffer layer and MoSe2 as a hole transport material using simulator device

Performance enhancement of Sb2Se3-based solar cell with hybrid buffer layer and MoSe2 as a hole transport material using simulator device

Design and simulation of a high-performance CH3NH3Pb(I1–xClx)3-based perovskite solar cell using a CeOx electron transport layer and NiO hole transport layer

Analysis of The Efficiency In Sb2Se3 Thin-Film Solar Cells Using Alternative Buffer Layers In n-p and n-i-p Structures By Numerical Simulation.

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Evaluation of Cd_1–xZn _x S as electron transport layer in superstrate and inverted configurations of Sb₂Se₃ solar cells with n-i-p structure

Design and simulation of a high-performance CH₃NH₃Pb(I_1–xCl_x)₃-based perovskite solar cell using a CeO_x electron transport layer and NiO hole transport layer