Evaluation of CdZnTeSe as a high-quality gamma-ray spectroscopic material with better compositional homogeneity and reduced defects

Roy, Utpal; Camarda, G. S.; Cui, Yonggang; Gul, R.; Yang, Ge; Zázvorka, Jakub; Dědič, V.; Franc, J.; James, R. B.

doi:10.1038/s41598-019-43778-3

Cited by 78 publications

(45 citation statements)

References 26 publications

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“…It was doped with indium. The growth process was similar to that reported by Roy et al [15], which started with the synthesis of the CdZnTnSe from predetermined stoichiometric amounts of 6N-purity CdZnTe and CdSe. The inner walls of the conically-tipped quartz ampoules, which were used for the synthesis and THM growth, were carbon coated.…”

Section: Methodssupporting

confidence: 58%

“…The THM process used in this study was carried out in a 3-zone furnace. Ingots were grown by lowering the ampoules a few millimeters per day [15]. The wafer used in this experiment was cut from the as-grown CZTS ingot using a diamond-impregnated wire saw.…”

Section: Methodsmentioning

confidence: 99%

“…The spatial charge transport uniformity will result in increasing the performance and yield of high-quality detectors, hence lowering the cost of high-resolution devices. In addition, compositional homogeneity can increase the overall yield of detector-grade material in CZTS as compared with CZT [1,14,15].…”

Section: Introductionmentioning

confidence: 99%

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Ammonium Fluoride Passivation of CdZnTeSe Sensors for Applications in Nuclear Detection and Medical Imaging

Egarievwe

Roy

Goree

et al. 2019

Sensors

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Cadmium zinc telluride selenide (Cd1−xZnxTe1−ySey or CZTS) is one of the emerging CdTe-based semiconductor materials for detecting X- and gamma-ray radiation at or near room temperature (i.e., without cryogenic cooling). Potential applications of CZTS sensors include medical imaging, X-ray detection, and gamma-ray spectroscopy. Chemical passivation of CZTS is needed to reduce the conductivity of Te-rich surfaces, which reduces the noise and improves the device performance. In this study, we focus on the effect of surface passivation of CZTS using a 10% aqueous solution of ammonium fluoride. The effects of the chemical treatment were studied on the leakage current, charge transport measured as the electron mobility-lifetime (µτ) product, and the spectral resolution measured as the full-width at half-maximum (FWHM) of specific peaks. After passivation, the leakage current increased and began to decrease towards pre-passivation levels. The energy resolutions were recorded for eight applied voltages between −35 V and −200 V. The results showed an average of 25% improvement in the detector’s energy resolution for the 59.6 keV gamma peak of Am-241. The electron µτ product was unchanged at 2 × 10−3 cm2/V. These results show that ammonium fluoride is effective for chemical passivation of CZTS detectors.

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Section: Methodssupporting

confidence: 58%

Section: Methodsmentioning

confidence: 99%

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Ammonium Fluoride Passivation of CdZnTeSe Sensors for Applications in Nuclear Detection and Medical Imaging

Egarievwe

Roy

Goree

et al. 2019

Sensors

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“…Cadmium zinc telluride selenide (CdZnTeSe or CZTS) has shown great promise DOI: 10.4236/msa.2020.118036 554 Materials Sciences and Applications as a semiconductor material for fabricating cheaper gamma-ray detection and spectroscopy devices for applications at room temperature (i.e., without cryogenic cooling), compared to similar materials like cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe of CZT) [1] [2] [3] [4]. This advantage comes from the high crystal uniformity of CZTS compared to CdTe and CZT [2] [3]. A material with higher crystal uniformity and lesser defects will give more detector-grade wafers per volume of the as-grown ingot.…”

Section: Introductionmentioning

confidence: 99%

Study of CdZnTeSe Gamma-Ray Detector under Various Bias Voltages

Drabo¹,

Egarievwe²,

Roy³

et al. 2020

MSA

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Cadmium zinc telluride selenide (CdZnTeSe) is a new semiconductor material for gamma-ray detection and spectroscopy applications at room temperature. It has very high crystal quality compared to similar materials such as cadmium telluride and cadmium zinc telluride. The consistency of peak position in radiation detection devices is important to practical applications. In this paper, we have characterized a CdZnTeSe planar detector for bias voltages in the range of −20 V to −200 V and amplifier shaping time of 2, 3 and 6 µs. The peak position of the 59.6-keV gamma line of 241 Am becomes more stable as the absolute value of the applied voltage increases. The best energy resolution of 8.5% was obtained for the 59.6-keV gamma peak at −160 V bias voltage and 3-µs shaping time. The energy resolution was relatively stable in the −120 V to −200 V range for a 6-µs shaping time. Future work will be focused on the study of the peak position and energy resolution over time.

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“…Brost et al 3 found that Cd 1−x Mn x Te possesses strong photorefractive properties in the near-infrared region and can be applied to optical communication. Roy et al 4 also proposed that adding selenium (Se) was highly effective in reducing secondary phases (Te inclusions) and lattice hardening, thereby resulting in CdZnTe free from sub-grain boundary networks. From the point of view of material performance, Cd 1−x Mn x Te has potential advantages over CdZnTe in X-ray and gamma ray detector applications.…”

mentioning

confidence: 99%

Analyses of crystal growth, optical, electrical, thermal and mechanical properties of an excellent detector-grade Cd0.9Mn0.1Te: V crystal

Luan

Gao

et al. 2020

Sci Rep

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A high-quality cadmium manganese tellurium (cd 0.9 Mn 0.1 te: V or VcMt) crystal was successfully grown via modified Te solution vertical Bridgman method with vanadium doping. The crystal structure and quality were evaluated by powder X-ray diffraction analysis. An infrared transmission spectroscope measured the transmittance of the crystal at 64%, which would suggest that the grown crystal possessed high purity and crystallinity. Ultraviolet-visible-near-infrared spectroscopy analysis obtained the forbidden band width of approximately 1.577 eV. The current-voltage test indicated that the VCMT crystal had a high resistivity of 2.07 × 10 10 Ω·cm. Mechanical properties were measured by a Vickers microhardness tester. Crack surface morphology around the indentation was recorded. Furthermore, mechanical properties, such as microhardness, fracture toughness, brittleness index and yield strength were investigated and discussed. The thermal stability of the VCMT single crystal was determined by thermogravimetric analysis. A VCMT detector was fabricated with planar configuration structure, which showed a resolution of 11.62% of the 241 Am at 59.5 keV peak.

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Evaluation of CdZnTeSe as a high-quality gamma-ray spectroscopic material with better compositional homogeneity and reduced defects

Cited by 78 publications

References 26 publications

Ammonium Fluoride Passivation of CdZnTeSe Sensors for Applications in Nuclear Detection and Medical Imaging

Ammonium Fluoride Passivation of CdZnTeSe Sensors for Applications in Nuclear Detection and Medical Imaging

Study of CdZnTeSe Gamma-Ray Detector under Various Bias Voltages

Analyses of crystal growth, optical, electrical, thermal and mechanical properties of an excellent detector-grade Cd0.9Mn0.1Te: V crystal

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