Evaluation of copper Chemical-Vapor-Deposition films on glass and Si(100) substrates

Marzouk, H. A.; Kim, J. S.; Reucroft, P. J.; Jacob, Robert J. K.; Robertson, J. D.; Eloi, Corinne C.

doi:10.1007/bf00348173

Cited by 10 publications

(8 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The hydrogen reduction route requires the attainment of a considerable nominal thickness before coalescence occurs, and consequently, values of the electrical resistivity are mostly provided for thicknesses exceeding 100 nm, 13,16,[21][22][23][24][25][26][27][28] as presented in Fig. 4b.…”

Section: Resultsmentioning

confidence: 99%

CVD of Conducting Ultrathin Copper Films

Bahlawane

Premkumar

Reilmann

et al. 2009

J. Electrochem. Soc.

View full text Add to dashboard Cite

Miniaturization of electronic devices imposes challenges in terms of materials and production methods, and advances in the chemical vapor deposition ͑CVD͒ of metals are a key prerequisite toward reliable interconnects that are essential for their functionality. Electrically conducting ultrathin films of pure copper were grown on glass and silicon substrates starting at a temperature of 195°C. The growth kinetics does not exhibit any measurable nucleation time enabling early stage coalescence and high electrical conductivity. In situ monitoring of the CVD process using synchrotron-based mass spectrometry shows that the enhanced dehydrogenation of alcohols by copper II acetylacetonate precursor drives the Cu 0 deposition, which is kinetically favorable already at low temperature.The development of microelectronic devices faces several challenges regarding miniaturization and increased degree of integration, which is in part limited by the metal interconnects. 1 Copper remains a subject of intense development as an interconnect material 2-4 because of its remarkably low bulk electrical resistivity and resistance to electromigration. A highly conformal process, such as chemical vapor deposition ͑CVD͒, is particularly well adapted to overcome the deficiency in conformality of physical vapor deposition. However, CVD features are perceived to include complex nucleation kinetics on semiconducting surfaces and lack of morphology control for ultrathin films, in addition to the toxicity, limited availability, and laborious handling of successful precursors. These limitations are approached either by influencing the surface chemistry via the introduction of other families of CVD and atomic layer deposition ͑ALD͒ precursors 5 or by the development of deposition techniques, such as chemical fluid deposition ͑CFD͒. 6 Also, a two-step CVD process 4 was proposed to overcome the high readiness of copper atoms to diffuse on the surface, an effect which was demonstrated by ab initio molecular dynamics simulation. 3 Our recent efforts, taking advantage of pulsed liquid delivery ͓pulsed-spray evaporation-chemical vapor deposition ͑PSE-CVD͔͒ of the reactants, show that the use of alcohol as a unique coreactant is more efficient and attractive than the hydrogen reduction route for several transition metals. 7-10 Indeed, the utilization of alcohol as an additive in the CVD process was reported to enhance the growth kinetics, 11-13 yet the presence of hydrogen as a reducing agent was considered necessary. In contrast to CVD, the presence of hydrogen in addition to alcohol was not required to attain metallic thin films by CFD. 14 However, Cu-CFD requires the presence of catalytic surfaces ͑cobalt and nickel͒, and deposition temperatures are 100°C higher than those needed with H 2 reduction and thus less attractive.Our previous work on the growth of copper by CVD, which was performed using copper acetylacetonate ͓Cu͑acac͒ 2 ͔ and methanol, shows that smooth and polycrystalline copper films can be grown above 280°C. 9,15 In the present paper...

show abstract

Section: Resultsmentioning

confidence: 99%

CVD of Conducting Ultrathin Copper Films

Bahlawane

Premkumar

Reilmann

et al. 2009

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…After deposition, three new peaks appear at 2θ = 43.3°, 50.4°and 74.0°for all the runs. These peaks represent the 111, 200 and 220 reflections of pure copper [22,24,25]. The intensity of these peaks is relatively low due to the low amount of copper measured by ICP-MS. No oxide was detected since cuprous oxide (Cu 2 O) and cupric oxide (CuO) should have intense peaks at 2θ = 36.1°and 39°r espectively (111 reflection) [44,45].…”

Section: Xrd Resultsmentioning

confidence: 99%

“…CuCl 2 [21], and it is one of the rare copper precursors commercially available at reasonable price. It was successfully used to deposit copper thin films on planar substrates such as borosilicate glass [22], silicon [23,24], Kapton polymer [25] and metals (Al, Ni and Pd) [26]. At atmospheric pressure, pure copper was obtained between 220 and 400°C under pure hydrogen or using N 2 /H 2 or Ar/H 2 mixtures with H 2 concentrations higher than 50 vol% [22,23,26].…”

Section: ·Kmentioning

confidence: 99%

Fluidized bed chemical vapor deposition of copper nanoparticles on multi-walled carbon nanotubes

Lassègue

Noé

Monthioux

et al. 2017

Surface and Coatings Technology

View full text Add to dashboard Cite

OATAO is an open access repository that collects the work of Toulouse researchers and makes it freely available over the web where possible. A B S T R A C TMulti-walled carbon nanotubes tangled in easy-to-fluidize porous balls have been decorated by pure copper nanoparticles using a pre-industrial fluidized bed chemical vapor deposition process. Copper (II) acetylacetonate Cu(acac) 2 was used as precursor. The low precursor volatility led to low deposition rates, responsible for a nonuniformity of the deposit both on the MWCNT balls and from the outer part to the center of the balls. An oxidative pre-treatment of the MWCNTs allowed to increase slightly the deposit weight and uniformity, by creating new nucleation sites on the nanotube surface. It also allowed decreasing the size of Cu nanoparticles by a factor of ten. A decrease of the deposition temperature increased more markedly the deposit weight, by probably favoring the formation of gaseous reactive intermediate species more reactive on the oxidized nanotube surface. A more efficient precursor delivery system would allow reaching higher deposition rates and much more uniform deposits, making possible an industrial production of metallized carbon nanotubes.

show abstract

“…The reasons for the choice of this precursor are a relatively high volatility of the compound and a conveniently low decomposition temperature (t dec D 286 ± C). The selection of this metalorganic substance was also based on its popularity as a precursor for various chemical vapor deposition (CVD) processes (e.g., Pelletier et al 1991;Pauleau and Fasasi 1991;Ger n et al 1993;Marzouk et al 1994; Hammadi et al 1993;Maruyama and Shirai 1995). The kinetics of the precursor decomposition has been studied in the literature by Tsyganova et al (1992).…”

Section: Introductionmentioning

confidence: 99%