1990
DOI: 10.1002/sia.740150805
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Evaluation of correction accuracy of several schemes for AES matrix effect corrections

Abstract: A matrix effect correction is required to improve the accuracy of quantitative AES analysis. The correction includes terms involving the atomic density (n), electron back-scattering factor (R) and electron escape depth (L). Many schemes have been proposed by various people for corrections of the R and L terms. However, up to now, there have been no systematic investigations of the correction accuracy of the proposed schemes. We have evaluated the correction accuracy, based on measured intensity data for A d u … Show more

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Cited by 20 publications
(2 citation statements)
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“…This is in agreement with the VAMAS study conducted on this system, 12 and mainly due to the fact that the two metals are located far away from each other in the periodic table. This affects strongly the density, the backscattering factor, and the inelastic mean free path.…”
Section: Segregation Resultssupporting
confidence: 90%
“…This is in agreement with the VAMAS study conducted on this system, 12 and mainly due to the fact that the two metals are located far away from each other in the periodic table. This affects strongly the density, the backscattering factor, and the inelastic mean free path.…”
Section: Segregation Resultssupporting
confidence: 90%
“…This functions have also been proposed as functions of mean atomic number and overvoltage ratio (U D E/E b , where E b is the binding energy). 1,5 In a similar to Au and Cu, the polynomial approximation function of Si and N is expressed as Eqn (3) …”
Section: Application To Quantitative Analysis Of Insulator Sample (Simentioning
confidence: 99%