Evaluation of Damage Layer in an Organic Film with Irradiation of Energetic Ion Beams

Hada, Masaki; Ibuki, Sachi; Ninomiya, Satoshi; Seki, Toshio; Aoki, Takaaki; Matsuo, Jiro

doi:10.1143/jjap.49.036503

Cited by 13 publications

(6 citation statements)

References 20 publications

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“…2 and Table 1, no significant damage layer (carbonized layer) was induced on the surface of the L-leucine film. This result corresponds well to the previously reported ion-beam induced surface-damage layer formation on poly(methyl metacrylate) 13 and L-leucine films 14 using ellipsometry, X-ray photo-electron spectroscopy, AFM, and scanning electron microscopy measurements; where the damage layer on the organic materials induced by the Ar cluster ion beam irradiation was estimated to be less than 1 nm. Moreover, ion beam irradiation induces damage into not only on the surface but also in the bulk of the organic films because of the radicals and electrons produced by the energetic ion bombardment.…”

Section: Bulk)supporting

confidence: 91%

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Evaluation of Surface Damage of Organic Films due to Irradiation with Energetic Ion Beams

Hada¹,

Hontani

Ibuki

et al. 2011

AIP Conference Proceedings

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Section: Bulk)supporting

confidence: 91%

“…The experimental setup and the analysis methods are shown in detail elsewhere. 13,14 The surface roughness of the films was also measured with AFM (Shimazu, SPM9500J2). AFM tomography images were taken in the tapping mode at room temperature and atmospheric pressure.…”

Section: Methodsmentioning

confidence: 99%

Evaluation of Surface Damage of Organic Films due to Irradiation with Energetic Ion Beams

Hada¹,

Hontani

Ibuki

et al. 2011

AIP Conference Proceedings

Self Cite

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“…(a) and (c)), the sputtered depths were found to be 780 and 920 nm (equivalent to sputtering rates of 2.52 × 10 –27 and 2.97 × 10 –27 m 3 /ion) for the C 60 + beam and Ar + ‐C 60 + co‐sputtering, respectively. The optical image also suggested significant irradiation‐induced carbonization on PMMA using a single 10 kV C 60 + beam, and the substrate become opaque. In contrast, after co‐sputtering, the crater area remained transparent.…”

Section: Resultsmentioning

confidence: 94%

Molecular dynamic‐secondary ion mass spectrometry (D‐SIMS) ionized by co‐sputtering with C₆₀⁺ and Ar⁺

You

Chang

Lin

et al. 2011

Rapid Comm Mass Spectrometry

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Dynamic secondary ion mass spectrometry (D-SIMS) analysis of poly(ethylene terephthalate) (PET) and poly(methyl methacrylate) (PMMA) was conducted using a quadrupole mass analyzer with various combinations of continuous C(60)(+) and Ar(+) ion sputtering. Individually, the Ar(+) beam failed to generate fragments above m/z 200, and the C(60)(+) beam generated molecular fragments of m/z ~1000. By combining the two beams, the auxiliary Ar(+) beam, which is proposed to suppress carbon deposition due to C(60)(+) bombardment and/or remove graphitized polymer, the sputtering range of the C(60)(+) beam is extended. Another advantage of this technique is that the high sputtering rate and associated high molecular ion intensity of the C(60)(+) beam generate adequate high-mass fragments that mask the damage from the Ar(+) beam. As a result, fragments at m/z ~900 can be clearly observed. As a depth-profiling tool, the single C(60)(+) beam cannot reach a steady state for either PET or PMMA at high ion fluence, and the intensity of the molecular fragments produced by the beam decreases with increasing C(60)(+) fluence. As a result, the single C(60)(+) beam is suitable for profiling surface layers with limited thickness. With C(60)(+)-Ar(+) co-sputtering, although the initial drop in intensity is more significant than with single C(60)(+) ionization because of the damage introduced by the auxiliary Ar(+), the intensity levels indicate that a more steady-state process can be achieved. In addition, the secondary ion intensity at high fluence is higher with co-sputtering. As a result, the sputtered depth is enhanced with co-sputtering and the technique is suitable for profiling thick layers. Furthermore, co-sputtering yields a smoother surface than single C(60)(+) sputtering.

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“…The total energy is shared by each atom in the cluster, limiting the penetration depth and thereby the extent of the chemically damaged layer under the surface. Owing to their high sputtering yield, these ions show a high cleaning efficiency and thus avoid damage accumulation on materials removed layer-by-layer [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Hybrid Organic/Inorganic Materials Depth Profiling Using Low Energy Cesium Ions

Noël

Houssiau

2016

J. Am. Soc. Mass Spectrom.

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Abstract. The structures developed in organic electronics, such as organic light emitting diodes (OLEDs) or organic photovoltaics (OPVs) devices always involve hybrid interfaces, joining metal or oxide layers with organic layers. No satisfactory method to probe these hybrid interfaces physical chemistry currently exists. One promising way to analyze such interfaces is to use in situ ion beam etching, but this requires ion beams able to depth profile both inorganic and organic layers. Mono-or diatomic ion beams commonly used to depth profile inorganic materials usually perform badly on organics, while cluster ion beams perform excellently on organics but yield poor results when organics and inorganics are mixed. Conversely, low energy Cs + beams (<500 eV) allow organic and inorganic materials depth profiling with comparable erosion rates. This paper shows a successful depth profiling of a model hybrid system made of metallic (Au, Cr) and organic (tyrosine) layers, sputtered with 500 eV Cs + ions. Tyrosine layers capped with metallic overlayers are depth profiled easily, with high intensities for the characteristic molecular ions and other specific fragments. Metallic Au or Cr atoms are recoiled into the organic layer where they cause some damage near the hybrid interface as well as changes in the erosion rate. However, these recoil implanted metallic atoms do not appear to severely degrade the depth profile overall quality. This first successful hybrid depth profiling report opens new possibilities for the study of OLEDs, organic solar cells, or other hybrid devices.

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Evaluation of Damage Layer in an Organic Film with Irradiation of Energetic Ion Beams

Cited by 13 publications

References 20 publications

Evaluation of Surface Damage of Organic Films due to Irradiation with Energetic Ion Beams

Evaluation of Surface Damage of Organic Films due to Irradiation with Energetic Ion Beams

Molecular dynamic‐secondary ion mass spectrometry (D‐SIMS) ionized by co‐sputtering with C₆₀⁺ and Ar⁺

Hybrid Organic/Inorganic Materials Depth Profiling Using Low Energy Cesium Ions

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Evaluation of Damage Layer in an Organic Film with Irradiation of Energetic Ion Beams

Cited by 13 publications

References 20 publications

Evaluation of Surface Damage of Organic Films due to Irradiation with Energetic Ion Beams

Evaluation of Surface Damage of Organic Films due to Irradiation with Energetic Ion Beams

Molecular dynamic‐secondary ion mass spectrometry (D‐SIMS) ionized by co‐sputtering with C60+ and Ar+

Hybrid Organic/Inorganic Materials Depth Profiling Using Low Energy Cesium Ions

Contact Info

Product

Resources

About

Molecular dynamic‐secondary ion mass spectrometry (D‐SIMS) ionized by co‐sputtering with C₆₀⁺ and Ar⁺