“…[11] A negative vacuum level change can create potential wells, capturing carriers and leading to detrimental charge accumulation. Simultaneously, akin to the tunnel effect employed in tunnel oxide passivation contact (TOPCon) solar cells, [12,13] instead of elevating the series resistance in PSCs, [14,15] the introduction of a thin insulating layer at the perovskite/HTL interface facilitates the flow of charge carriers through potential barriers in the device structure. Among the numerous other strategies, including perovskite component engineering, [16,17] solvent engineering, [18] additive engineering, [20] and interface engineering, [21][22][23] this inserted thin insulating layer with an appropriate thickness can increase the open-circuit voltage (Voc) without significantly compromising the fill factor (FF).…”