2021
DOI: 10.1016/j.surfin.2021.101496
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Evaluation of dominant loss mechanisms of PERC cells for optimization of rear passivating stacks

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Cited by 4 publications
(4 citation statements)
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“…Further, increase in W Al results in the decrease of J sc . This is because (1) the IR part of the incident spectrum is absorbed by metal without contributing to optical generation and the optical generation near the passivation region is higher than metal contact region [ 29 ] and (2) losses of minority electrons at metal/semiconductor interface due to Shockley–Read–Hall (SRH) recombination [ 30 ] without contributing to the total current. Again decrease of W Al results in a rapid decrease of J sc due to carrier crowding at metal contacts.…”
Section: Resultsmentioning
confidence: 99%
“…Further, increase in W Al results in the decrease of J sc . This is because (1) the IR part of the incident spectrum is absorbed by metal without contributing to optical generation and the optical generation near the passivation region is higher than metal contact region [ 29 ] and (2) losses of minority electrons at metal/semiconductor interface due to Shockley–Read–Hall (SRH) recombination [ 30 ] without contributing to the total current. Again decrease of W Al results in a rapid decrease of J sc due to carrier crowding at metal contacts.…”
Section: Resultsmentioning
confidence: 99%
“…[11] A negative vacuum level change can create potential wells, capturing carriers and leading to detrimental charge accumulation. Simultaneously, akin to the tunnel effect employed in tunnel oxide passivation contact (TOPCon) solar cells, [12,13] instead of elevating the series resistance in PSCs, [14,15] the introduction of a thin insulating layer at the perovskite/HTL interface facilitates the flow of charge carriers through potential barriers in the device structure. Among the numerous other strategies, including perovskite component engineering, [16,17] solvent engineering, [18] additive engineering, [20] and interface engineering, [21][22][23] this inserted thin insulating layer with an appropriate thickness can increase the open-circuit voltage (Voc) without significantly compromising the fill factor (FF).…”
Section: Introductionmentioning
confidence: 99%
“…[11] A negative vacuum level change can create potential wells, capturing carriers and leading to detrimental charge accumulation. Simultaneously, akin to the tunnel effect employed in tunnel oxide passivation contact (TOPCon) solar cells, [12,13] instead of elevating the series resistance in PSCs, [14,15] the introduction of a thin insulating layer at the perovskite/HTL interface facilitates the flow of charge carriers through potential barriers in the device structure. Among the numerous other strategies, including perovskite component engineering, [16,17] solvent engineering, [18] additive engineering, [20] and interface engineering, [21][22][23] this inserted thin insulating layer with an appropriate thickness can increase the open-circuit voltage (Voc) without significantly compromising the fill factor (FF).…”
Section: Introductionmentioning
confidence: 99%