Evaluation of electricity generation on GeSn single‐junction solar cell

Abstract

Electricity generation of GeSn single-junction solar cell has been carefully examined in both its p-on-n and n-on-p configurations in its normal and inverted structures. The superior p + /n construction with a critical doping of the light-doped layer (N d = 7.5 Â 10 18 cm À3 ) has been observed. For the normal one, the active layer should be composed of 50-100 nm emitter and 3-5 μm base to less material costs. Moreover, dislocation density and 1 MeV electron fluence should be lower than 1 Â 10 5 cm À2 and 1 Â 10 10 cm À2 , respectively, which is helpful for obtaining a preferable conversion efficiency. To explore lower cost solar cell, the simulated results might be favorable to guide experimental fabrication of GeSn devices.

Effect of Growth Temperature on Crystallization of Ge1−xSnx Films by Magnetron Sputtering

“…Ge 1−x Sn x alloys have attracted considerable attention in Si-based optoelectronic device integration because of their enhanced carrier mobility, adjustable band gap structure and compatibility with the CMOS processes [1][2][3][4][5]. Efficient devices based on Ge 1−x Sn x have been fabricated, including thin film transistors [6][7][8][9], solar cells [10], photodetectors [11][12][13], LEDs [14][15][16][17], lasers [18,19], etc. By adjusting the content of Sn and the strain of Ge 1−x Sn x , the direct band gap can be extended to mid-infrared applications [20][21][22].…”