Abstract:This paper investigated electroluminescence (EL) in AlGaN/GaN HEMTs fabricated on a free-standing GaN substrate (GaN-on-GaN) with ones on a SiC substrate (GaN-on-SiC) as a reference. When a drain voltage (V
ds) of the GaN-on-GaN was increased, EL peak was kept to beside the gate, indicating that the highest electric field region stayed at a vicinity of the gate. On the other hand, EL of the GaN-on-SiC shifted from the gate to the drain electrode under an increased Vds. Our results indicate th… Show more
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