Evaluation of encapsulation strategies for solution-processed flexible organic light-emitting diodes

Single-Step Inkjet-Printed Dielectric Template for Large Area Flexible Signage and Low-Information Displays

“…In contrast, flexible devices are encapsulated with Tera Barrier films followed by ALD of Al 2 O 3 thin film reported in our previous work. 46 4.4. Instruments.…”

“…The rigid/glass substrate devices were encapsulated with a cover glass with edge sealing with a UV-curable epoxy. In contrast, flexible devices are encapsulated with Tera Barrier films followed by ALD of Al 2 O 3 thin film reported in our previous work …”

Self-cleaning and fully polymer-based super-moisture-resistant gas barrier coating films with 2D polymers for flexible electronic devices and packaging applications

“…The fabrication of OLED devices has been described in detail in our previous reports. 17,50 A Keithley 2402 was used as the source meter unit, a CA-2500 2D Colour Analyzer (Konica Minolta Sensing) was used to measure luminance and the LabVIEW program was used to record real-time data for the OLED device characterization. The lifetime values of all OLED devices at 25 1C and 50% relative humidity were measured using a constant current source in the continuous luminescence mode and an initial luminance (L 0 ) of 1000 Cd m À2 .…”

“…[14][15][16] Therefore, effective encapsulation materials and techniques to prevent degradation and extend the lifetime of the FOEDs are required for their future commercialization. 17 Conventionally, FOEDs were encapsulated by thin film encapsulation (TFE) or using gas-diffusion-barrier-films (GDBFs) via multi-layer inorganic/organic stackings. [18][19][20][21][22] The inorganic layer in the multi-layer organic/inorganic TFE is generally deposited using vacuum-based technology, such as atomic layer deposition (ALD), sputtering, or plasma-enhanced chemical vapor deposition (PECVD).…”

Design and Fabrication of PDMS/Al2O3 Hybrid Flexible Thin Films for OLED Encapsulation Applications

“…The resistance of conductive Ca increases after oxidation, and the more severe the oxidation, the greater the resistance. ,, Hence, WVTR can be calculated by the degree of Ca corrosion versus storage time using resistance data obtained through self-built signal acquisition software as well as a multimeter (Agilent 34410A). The Ca thin films with a thickness of 200 nm and an area of 5 mm × 10 mm were deposited and connected to two multimeters to automatically collect the voltage and current to calculate the resistance in the atmosphere, and the WVTR was calculated by the following equation − WVTR = − n · δ Ca · ρ Ca · d G d t · M false( normalH 2 normalO false) M false( Ca false) · L W · Ca a rea w indow a rea false( normalg / normalm 2 / day false) where n ( n = 2) is the molar equivalent of the corrosion reaction; δ (3.91 × 10 –8 Ω·m) and ρ (1.55 g/cm 3 ) are the resistivity and density of Ca, respectively; G is the measured resistivity; M represents molar masses, M (H 2 O) = 18 g/mol and M (Ca) = 40 g/mol; L and W are the length and width of the Ca films, respectively; and Ca Area and Window Area are the areas of the Ca film and the testing window, respectively. Here, Ca Area /Window Area = 1 and L / W = 2.…”