Evaluation of Fabrication Damage in GaAs Wafers

Kuwamoto, H.; Holmes, D.R.; Ōtsuka, N.

doi:10.1149/1.2100713

Cited by 13 publications

(8 citation statements)

References 4 publications

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“…Polishing damage has been investigated by X-ray techniques in both silicon and gallium arsenide. [13][14][15] Iida and Kohra showed a distinct difference in the omega rocking curve intensity between lapped, scratched, and etched Si surfaces using a triple crystal X-ray diffractometer. 13 Kuwamoto et al inspected the mechanical damage in gallium arsenide with X-ray diffraction omega rocking scans.…”

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“…13 Kuwamoto et al inspected the mechanical damage in gallium arsenide with X-ray diffraction omega rocking scans. 14 A comparison of the peak width between lapped, cut, and etched GaAs surfaces showed that etching removes the damaged surface layers and, in turn, narrows the peak width and increases its intensity. Wang and Matyi used grazing incidence XRD and inclined Bragg plane XRD for the inspection of chemical mechanical polishing of GaAs.…”

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Assessment of Polishing-Related Surface Damage in Silicon Carbide

Sanchez

Grim

et al. 2002

J. Electrochem. Soc.

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The subsurface damage generated by the polishing of silicon carbide crystals was investigated by measuring dislocation densities in sublimation grown SiC layers and through the use of high-resolution X-ray diffraction. Physical vapor transport growth on silicon carbide seeds, with a typical polishing finish using 1 m diamond paste, leads to the nucleation of threading edge dislocations of density on the order of 10 7 cm Ϫ2 and threading screw dislocations of density on the order of 10 6 cm Ϫ2 . Chemical mechanical polishing lowered the dislocation density by four orders of magnitude for threading screw dislocations and two orders of magnitude for threading edge dislocations. Controlled high temperature hydrogen etching was used to determine the depth of damage produced by mechanical polishing and it was found to be 700 Ϯ 300 Å. Diffuse scattering from mechanically polished, chemical mechanically polished, and hydrogen etched SiC crystals were quantified by triple axis high-resolution X-ray diffraction. A consistent trend of decreasing diffuse scattering intensity was observed in mechanically polished, chemical mechanically polished, and hydrogen etched surfaces. Root mean squared ͑rms͒ roughness measurements of the surface finishes, obtained with atomic force microscopy, were in agreement with the high-resolution X-ray diffraction results. The mechanically polished surfaces had an rms roughness that was two to three times larger than the chemical mechanically polished surfaces.

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Assessment of Polishing-Related Surface Damage in Silicon Carbide

Sanchez

Grim

et al. 2002

J. Electrochem. Soc.

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“…Diffraction peak broadening was exhibited by gallium arsenide (GaAs), indium phosphide (InP), and BT ceramics after mechanical processing treatment such as slicing, lapping, and/or polishing. 22,25,26) The lowered peak intensities and predominant peak broadening in polished ceramics are related to the impact of mechanical processing. On the other hand, with thermal annealing, the diffraction peaks which were shifted slightly to lower 2θ angles after polishing treatment were shifted to higher 2θ angles with increased peak intensities and sharpness.…”

Section: Resultsmentioning

confidence: 99%

Thermal annealing induced recovery of damaged surface layer for enhanced ferroelectricity in Bi-based ceramics

Nam¹,

Kim²,

Khanal³

et al. 2019

Jpn. J. Appl. Phys.

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The role of thermal annealing treatment in the enhancement of the piezoelectric and ferroelectric properties of 0.3BaTiO3–0.1Bi(Mg1/2Ti1/2)O3–0.6BiFeO3 (0.3BT–0.1BMT–0.6BF) lead-free piezoelectric ceramics was investigated. Mechanical stress induced by ceramic processing such as polishing and cutting could severely affect the electrical properties of 0.3BT–0.1BMT–0.6BF lead-free piezoelectric ceramics. In order to explore the impact of mechanical processing on their electrical properties, polished and cut samples were thermally annealed to remove damaged surface layers. It was found that the remanent polarization (Pr; 27.27 μC cm−2) and large-field piezoelectric coefficient (d33*; 334 pm V−1) for the thermally annealed sample were remarkably enhanced in comparison to those of the polished sample (Pr of 17.57 μC cm−2 and d33* of 271 pm V−1). This significant enhancement of piezoelectric and ferroelectric properties in thermally annealed ceramics, without any considerable change in grain size, suggests a major contribution of thermal annealing to the removal of damaged surface layers.

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“…The broadening of diffraction peaks with lowered peak intensities has been ascribed to the surface damage. 19) In unpoled polycrystalline tetragonal piezoelectric ceramics with randomly oriented domains, the ratio of the intensities of the two peaks (I (002) /I (200) ) is expected to be ³0.5, although the ratio is usually 0.58 in the unstressed state. 20) The value of the intensity ratio higher than 0.5 indicates that the c-domains are preferentially existed by polishing.…”

Section: Resultsmentioning

confidence: 99%

Grain-size dependence of piezoelectric properties in thermally annealed BaTiO<sub>3</sub> ceramics

Khanal

Kim

et al. 2018

J. Ceram. Soc. Japan

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BaTiO 3 ceramics with grain sizes of 4.726.1¯m were fabricated using 100 and 300 nm BaTiO 3 powders by employing a two-step sintering (TSS) or conventional one-step sintering (CS) method. Polished and cut BaTiO 3 samples were annealed for the recovery and relaxation of mechanical-processing-induced surface damage and lattice strain, and the piezoelectric properties were investigated. TSS-BaTiO 3 ceramics annealed at 1000°C for 1 h with a grain size of 4.9¯m exhibited an excellent piezoelectric property of d 33 = 529 pC/N, while the d 33 value of CS-BaTiO 3 ceramics annealed at 1200°C for 8 h with a grain size of 26.1¯m was 272 pC/N. Besides the excellent piezoelectric properties of the fine-grained BaTiO 3 ceramics, the performance of the coarse-grained ceramics was higher than previously reported. The observed superior piezoelectric and electromechanical properties in annealed samples despite the increase in grain size suggested that the effect of annealing was more crucial than that of grain size.

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Evaluation of Fabrication Damage in GaAs Wafers

Abstract: not Available.

Cited by 13 publications

References 4 publications

Assessment of Polishing-Related Surface Damage in Silicon Carbide

Assessment of Polishing-Related Surface Damage in Silicon Carbide

Thermal annealing induced recovery of damaged surface layer for enhanced ferroelectricity in Bi-based ceramics

Grain-size dependence of piezoelectric properties in thermally annealed BaTiO<sub>3</sub> ceramics

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