Evaluation of field emission properties from multiple-stacked Si quantum dots

Electron Field Emission from Multiply-Stacked Si Quantum Dots Structures with Graphene Top-Electrode

“…In our previous work, we succeeded in the fabrication of multiple-stacked Siquantum-dots (Si-QDs) layers with ultrathin SiO2 interlayers by repeating low-pressure chemical vapor deposition (LPCVD) using pure SiH4 and dry O2 thermal oxidation (12)(13). Recently, we also demonstrated electron emission from diodes with multiple-stacked Si-QDs structures under biases of 6V and over, in which electric field is concentrated the upper dot layers as evaluated by hard X-ray photoelectron spectroscopy (14)(15)(16)(17)(18)(19). To enhance electron emission efficiency, one major issue regarding the electron emission device application of the multiple-stacked Si-QDs is minimizing electron scattering at top electrodes.…”

Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy

“…[22][23][24][25] We demonstrated electron FE from a 6-fold stacked structure of Si-QDs by applying DC biases of −6 V and over. 26) We also fabricated a 6-fold stacked structure with phosphorous doped Si-QDs and characterized their electron FE under a DC bias application. 27) We found that the electron emission was drastically enhanced at the applied DC biases over −11 V in comparison with the undoped Si-QDs stack while threshold voltage for the electron emission was increased to −8 V. It is suggested that the electric field in the Si-QDs stack was modulated because of the positive charge in the top side of the Si-QDs stack caused by valence and conduction electron extraction from the Si-QDs.…”