Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories

Atomic Layer Deposition of Gadolinium Aluminate using Gd(iPrCp)3, TMA, and O3 or H2O

“…[7] Hf x Al 1-x O y layers have also been studied because their dielectric permittivity k is higher than that of Al 2 O 3 , in combination with rather large band gap values. [8][9][10][11] As an alternative to hafnium oxidebased dielectrics, rare-earth oxide-based materials have also been considered. For La [12,13] A related material is LaAlSiO x , which can be formed by thin film reaction of LaAlO 3 with SiO 2 during high-temperature annealing, similar to other rare-earthcontaining oxides.…”

Charge-Trapping Non-Volatile Memories

“…In general, the triple-layer dielectric stacks comprising a SiO 2 (high band-gap) layer sandwiched by a high-k dielectric (low band-gap), exhibits higher electric field sensitivity during program/erase operations, but do not improve significantly the charge retention. On the other hand, the replacement of the single or ONO IPD by a triple-layer stack where a high-k dielectric is sandwiched by a SiO 2 layer (e.g., SiO 2 /HfAlO/SiO 2 ), increases the coupling between the NCs and the control gate and mitigates the charge leakage to the gate (Molas et al 2008). Also, the combination of metal NC with High-k dielectrics either as tunnel oxide or control oxide have been studied by (Pavel and Islam 2010).…”

A Comparison of O3 and H2O as Oxygen Sources for Atomic Layer Deposition Processing of HfAlOx Thin Films for High-k Dielectric Nanocapacitor Applications

“…High dielectric constant insulators have been researched for applications in logic and memory devices for a number of years as a route towards extending conventional switching and data storage technologies (1)(2)(3)(4)(5). Capacitors have also been researched for several years for alternative power storage applications, owing to a number of attractive features including long cycle life, as capacitors can be charged and discharged from hundreds of thousands to millions of times before they wear out (6).…”