In this paper, a computational multi-phase field approach is utilized to study the formation of the Cu/Sn/Cu micro-joint in 3-Dimensional Integrated Circuits (3DICs). The method considers the evolution of the system during isothermal solidification at 250°C for the case of two different interlayer thicknesses (5 and 10 lm). The Cu/Sn/Cu interconnection structure is important for the micro packaging in the 3DIC systems. The thermodynamics and kinetics of growth of gCu 6 Sn 5 and e-Cu 3 Sn interfacial intermetallics (IMCs) are investigated by coupling the multiphase field method with CALPHAD approach. The interaction of the phases is addressed by assuming a metastable condition for the Cu/Sn reacting system. The simulations start with the nucleation and rapid growth of the g-Cu 6 Sn 5 IMCs at the initial stage, the nucleation and growth of e-Cu 3 Sn IMCs at the intermediate stage ending with the full consumption of Sn layer and the domination of e-Cu 3 Sn IMCs at the later stages. In addition, comparing different diffusion rates through the grain boundary of g phases show that their morphology is the direct consequence of balance of kinetic forces. This work provides a valuable understanding of the dominant mechanisms for mass transport in the Cu/Sn/Cu low volume interconnections. The results show that the phase field modeling is successful in addressing the morphological evolution and growth of IMC layers in the 3DIC joint formation.