Evaluation of Imprint Property of (111)-Highly Oriented Lead Zirconate Titanate (PZT)-Base Ferroelectric Material

Abstract

We recently investigated the nature of resonant tunnelling in standard scalar Quantum Field Theory, uncovering the conditions required for resonance. It was shown that whereas the homogeneous false vacuum may decay via bubble nucleation, it may not decay in a resonant fashion. The no-go theorem given there is circumvented in this study by considering an initial state other than the homogeneous false vacuum, and we confirm our mechanism by showing in an explicit model how resonant tunnelling occurs. Using this model we demonstrate how the tunnelling rate depends on the energy of specially constructed initial states, with these states corresponding to contracting spherical bubbles of some vacuum that evolve to a minimum radius and then tunnel to another vacuum, instead of the classical motion where the bubble would just start to expand.

Large Resistance Ratio for High Reliability of Multi-Level Storage in Phase-Change Memory

“…Although flash memory, current mainstream memory, has been able to follow the evolution of the international technology roadmap for semiconductors, it is widely believed that it has some disadvantages such as low speed, low endurance for the growing demand and will soon meet some critical physical limitations for reliable downscaling [3]. Therefore, several alternative non-volatile memories (NVMs) such as ferroelectric memory (FeRAM) [4,5], magnetoresistive memory (MRAM) [6,7], phase change memory (PCM, or PRAM) [8][9][10][11][12][13][14], and resistive memory (RRAM) [15,16] have been under investigation for these years.…”

Preparation of (111)-Oriented SrRuO3/Pt Electrodes for Pb(Zr,Ti)O3-Based Ferroelectric Capacitors: Grain Size and Roughness Impact

“…(111)-oriented tetragonal Pb(Zr,Ti)O 3 films have been shown to have good electrical properties and good reliability and are therefore very attractive for integration into ferroelectric random access memories (FeRAMs). [1][2][3][4][5][6] Because the degree of orientation of Pb(Zr,Ti)O 3 (111)-oriented films is strongly dependent on the orientation control of the underlying electrode, a careful choice of the bottom electrode is required. Because Pb(Zr,Ti)O 3 deposition requires an oxygen-containing atmosphere and a relatively high temperature [typically 450 -600 C for films deposited by metal organic chemical vapor deposition (MOCVD)], only oxidationresistant electrodes such as noble metals (Pt and Ir) and oxides [IrO 2 , RuO 2 , (La,Sr)CoO 3 , or SrRuO 3 ] can be used.…”