Evaluation of Lateral Ni Diffusion in Si Nanowire Schottky Contact

We have experimentally demonstrated structural advantages due to rounded corners of rectangular-like cross-section of silicon nanowire (SiNW) field-effect transistors (FETs) on on-current (I ON), inversion charge density normalized by a peripheral length of channel cross-section (Q inv) and effective carrier mobility ( eff). The I ON was evaluated at the overdrive voltage (V OV) of 1.0 V, which is the difference between gate voltage (V g) and the threshold voltage (V th), and at the drain voltage of 1.0 V. The SiNW nFETs have revealed high I ON of 1600 A/m of the channel width (w NW) of 19 nm and height (h NW) of 12 nm with the gate length (L g) of 65 nm. We have separated the amount of on-current per wire at V OV = 1.0 V to a corner component and a flat surface component, and the contribution of the corners was nearly 60 % of the total I ON of the SiNW nFET with L g of 65 nm. Higher Q inv at V OV = 1.0 V evaluated by advanced split-CV method was obtained with narrower SiNW FET, and it has been revealed the amount of inversion charge near corners occupied 50 % of all the amount of inversion charge of the SiNW FET (w NW = 19 nm and h NW = 12 nm). We also obtained high  eff of the SiNW FETs compared with that of SOI planar nFETs. The  eff at the corners of SiNW FET has been calculated with the separated amount of inversion charge and drain conductance. Higher  eff around corners is obtained than the original  eff of the SiNW nFETs. The higher  eff and the large fractions of I ON and Q inv around the corners indicate that the rounded corners of rectangular-like cross-sections play important roles on the enhancement of the electrical performance of the SiNW nFETs.

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Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

Sato

Kakushima²,

Ahmet

et al. 2011

Microelectronics Reliability

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Electrical characterization of Si nanowire field-effect transistors with semi gate-around structure suitable for integration

Sato¹,

Kamimura²,

Arai³

et al. 2010

Solid-State Electronics

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Effects of corner angle of trapezoidal and triangular channel cross-sections on electrical performance of silicon nanowire field-effect transistors with semi gate-around structure

Sato

Kakushima

Ahmet

et al. 2011

Solid-State Electronics

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Structural effects, especially corner angle of upper-corners of trapezoidal and rectangular, and triangular cross-sectional shapes of silicon nanowire field-effect transistors on effective carrier mobility and normalized inversion charge density have been investigated. <100>-directed silicon nanowire field-effect transistors with semi-gate around structure fabricated on (100)-oriented silicon-on-insulator wafers were evaluated. As the upper-corner angle decreased from obtuse to acute angle, we observed an increased amount of inversion charge using split-CV measurement. On the other hand, the effective carrier mobility dependence on the upper-corner angle seems to have an optimized point near 100 o at 296 K. Although normalized inversion charge density was the largest with acute angles, effective carrier mobility with acute upper-corner angle was severely degraded.Considering the intrinsic delay time of SiNW FET, SiNW FETs with trapezoidal cross-section with upper-corner angle of 100 o is more suitable in this work to achieve high electrical performance. We believe these findings could represent guidelines for the design of high-performance SiNW FETs.

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Evaluation of Lateral Ni Diffusion in Si Nanowire Schottky Contact

Cited by 3 publications

References 4 publications

Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

Electrical characterization of Si nanowire field-effect transistors with semi gate-around structure suitable for integration

Effects of corner angle of trapezoidal and triangular channel cross-sections on electrical performance of silicon nanowire field-effect transistors with semi gate-around structure

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