Evaluation of MOSFETs with crystalline high-k gate-dielectrics: device simulation and experimental data
Florian Zaunert,
Ralf Endres,
Yordan Stefanov
et al.
Abstract:The evaluation of the world’s first MOSFETs with epitaxially-grown rare-earth high-k gate dielectrics is the main issue of this work. Electrical device characterization has been performed on MOSFETs with high-k gate oxides as well as their reference counterparts with silicon dioxide gate dielectric. In addition, by means of technology simulation with TSUPREM4, models of these devices are established. Current-voltage characteristics and parameter extraction on the simulated structures is conducted with the devi… Show more
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