Evaluation of Non-Rutherford Alpha Elastic Scattering Cross-sections for Silicon

Gurbich, A.F.; Jeynes, C.

doi:10.1016/j.nds.2014.08.074

Cited by 9 publications

(4 citation statements)

References 9 publications

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“…The selection of techniques was made regarding the complementarity of obtained information for the specific case of this study: the boron concentration was determined by Nuclear Reaction Analysis (NRA) using the 11 B(p,α 0 ) 8 Be nuclear reaction [15]; the oxygen content on the sample was determined by Elastic Backscattering Spectrometry (EBS); and Rutherford Backscattering Spectrometry (RBS) was used to provide additional information on the depth profile of elements. For the EBS modeling, the cross-section for the 16 O(p,p) 16 O elastic scattering provided by SigmaCalc was used [16]. The set of spectra was processed selfconsistently [17,18], which means that all spectra were fitted simultaneously by the minimization of a χ 2 function that takes into account all spectra.…”

Section: Boron Deposition and Ion Beam Analysismentioning

confidence: 99%

Characterization of multilayer Thick-GEM geometries as ¹⁰B converters aiming thermal neutron detection

et al. 2018

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Abstract. Boron-based thermal neutron detectors have recently regained some attention from the instrumentation community as a strong alternative to helium-3 detectors. From the existing concepts exploiting boron layers in position sensitive detectors, the Cascade [1] is the one that takes full advantage of the 2D capabilities of gaseous detectors, with the position resolution not limited by the architecture of the detector. In this work, a proposal for the Cascade detector, based on Thick-GEMs is presented, together with some preliminary studies of the suitable pitch that optimizes the neutron conversion efficiency, while keeping the collection efficiency intact. The characterization of Thick-GEM prototypes produced in Brazil with hole pitch from 0.75 to 3 mm shows that these devices already present a stable performance at low gains, also resulting in fair energy resolution, when cascaded with a standard Kapton TM 50 µm GEM. Results of the first attempts of boron film depositions with Ion Beam Assisted Deposition and characterization by Ion Beam Analysis are also presented.

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Section: Boron Deposition and Ion Beam Analysismentioning

confidence: 99%

Characterization of multilayer Thick-GEM geometries as ¹⁰B converters aiming thermal neutron detection

et al. 2018

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“…10 is widely agreed (see Bailey et al 126 ): such models have many parameters, as can be seen from the case of 28 Si(α,α) 28 Si reaction (involving the 32 S compound nucleus, see Table 2). 127 What is interesting is that constructing a detailed nuclear model sufficiently accurate for analytical purposes usually cannot be done from the existing, apparently comprehensive, compilations of nuclear data. In the 28 Si + α case initial data taken from the literature (regarded as authoritative: see Table 2) were significantly changed quantitativelyand even qualitatively in the assignment of quantum numbersin the effort to accurately fit the observed cross-section data.…”

Section: Evaluated Elastic Backscattering (Ebs) Cross-sectionsmentioning

confidence: 99%

“…Γ is the total resonance strength. NPA1990: Endt, Nuclear Physics A (1990); 131 NDS2011: Ouellet & Singh, Nuclear Data Sheets (2011)132 relies entirely on Källman, Zeitschrift für Physik A (1996);133 Surrey: Gurbich & Jeynes, Nuclear Data Sheets (2014)127 .…”

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confidence: 99%

Thin film depth profiling by ion beam analysis

Jeynes

Colaux

2016

Analyst

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The analysis of thin films is of central importance for functional materials, including the very large and active field of nanomaterials. Quantitative elemental depth profiling is basic to analysis, and many techniques exist, but all have limitations and quantitation is always an issue. We here review recent significant advances in ion beam analysis (IBA) which now merit it a standard place in the analyst's toolbox. Rutherford backscattering spectrometry (RBS) has been in use for half a century to obtain elemental depth profiles non-destructively from the first fraction of a micron from the surface of materials: more generally, "IBA" refers to the cluster of methods including elastic scattering (RBS; elastic recoil detection, ERD; and non-Rutherford elastic backscattering, EBS), nuclear reaction analysis (NRA: including particle-induced gamma-ray emission, PIGE), and also particle-induced X-ray emission (PIXE). We have at last demonstrated what was long promised, that RBS can be used as a primary reference technique for the best traceable accuracy available for non-destructive model-free methods in thin films. Also, it has become clear over the last decade that we can effectively combine synergistically the quite different information available from the atomic (PIXE) and nuclear (RBS, EBS, ERD, NRA) methods. Although it is well known that RBS has severe limitations that curtail its usefulness for elemental depth profiling, these limitations are largely overcome when we make proper synergistic use of IBA methods. In this Tutorial Review we aim to briefly explain to analysts what IBA is and why it is now a general quantitative method of great power. Analysts have got used to the availability of the large synchrotron facilities for certain sorts of difficult problems, but there are many much more easily accessible mid-range IBA facilities also able to address (and often more quantitatively) a wide range of otherwise almost intractable thin film questions.

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“…Proton elastic backscattering spectrometry (EBS) is a powerful method which has been widely used for accurate analysis of materials, such as impurity distributions in thin layers, determination of stoichiometry and elemental areal density. Compared to alpha particle EBS, proton EBS offers useful excursions from the Rutherford cross section, such as enhancements and resonant structures, at lower beam energy than for alpha particle EBS, whilst allowing a similar analysis depth [1][2][3]. Non-Rutherford proton EBS may thus be used on accelerators with lower energies than those required for EBS with alpha particles.…”

Section: Introductionmentioning

confidence: 99%

Measurement of (p,p) elastic differential cross sections for 17O in the 0.6–2 MeV range at 165°

Salimi

Kakuee

Masoudi

et al. 2022

Nuclear Instruments and Methods in Physics Research Section B:

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Evaluation of Non-Rutherford Alpha Elastic Scattering Cross-sections for Silicon

Cited by 9 publications

References 9 publications

Characterization of multilayer Thick-GEM geometries as ¹⁰B converters aiming thermal neutron detection

Characterization of multilayer Thick-GEM geometries as ¹⁰B converters aiming thermal neutron detection

Thin film depth profiling by ion beam analysis

Measurement of (p,p) elastic differential cross sections for 17O in the 0.6–2 MeV range at 165°

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Evaluation of Non-Rutherford Alpha Elastic Scattering Cross-sections for Silicon

Cited by 9 publications

References 9 publications

Characterization of multilayer Thick-GEM geometries as 10B converters aiming thermal neutron detection

Characterization of multilayer Thick-GEM geometries as 10B converters aiming thermal neutron detection

Thin film depth profiling by ion beam analysis

Measurement of (p,p) elastic differential cross sections for 17O in the 0.6–2 MeV range at 165°

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Characterization of multilayer Thick-GEM geometries as ¹⁰B converters aiming thermal neutron detection

Characterization of multilayer Thick-GEM geometries as ¹⁰B converters aiming thermal neutron detection