2009
DOI: 10.2478/s11772-009-0008-9
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Evaluation of optical quality and properties of Ga0.64In0.36N0.006As0.994 lattice matched to GaAs by using photoluminescence spectroscopy

Abstract: We have investigated optical properties of Ga0.64In0.36N0.006As0.994/GaAs single quantum-well structures using photoluminescence technique. We have found that nitrogen creates potential fluctuations in the InGaNAs structures, so it is the cause of trap centres in these structures and leads to localized excitons recombination dynamics. The near-band edge PL at 2 K exhibited a blueshift with an increase in excitation intensity of a sample but there is not such a shift in the PL peak position energy of same sampl… Show more

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