Evaluation of quantum efficiency of porous silicon photoluminescence

Skryshevsky, V. A.; Laugier, A.; Strikha, V. I.; Викулов, В. А.

doi:10.1016/0921-5107(96)01572-3

Cited by 27 publications

(13 citation statements)

References 8 publications

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“…The highest reported external quantum efficiencies at room temperature range from 10 [216,217] to 23% [85,86]. The highest value was obtained by passivating the PSi surface with very good quality thin oxide obtained by high-pressure water vapor annealing [85,86].…”

Section: Photoluminescencementioning

confidence: 83%

Silicon Nanocrystals in Porous Silicon and Applications

Gelloz

2010

Silicon Nanocrystals

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Section: Photoluminescencementioning

confidence: 83%

Silicon Nanocrystals in Porous Silicon and Applications

Gelloz

2010

Silicon Nanocrystals

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“…The highest PL external QE has been estimated to be about 23%. This is very much higher than the highest values reported to date (3-4%) [3,4]. The high QE obtained with HPA-treated sample is attributed to a significant enhancement of both the nc-Si surface passivation by high-grade oxide and higher exciton localization in nc-Si.…”

Section: Resultsmentioning

confidence: 99%

“…[1] The photoluminescence (PL) quantum efficiency (QE) in PS is limited by non-radiative recombinations resulting mostly from carrier trapping by defects [2]. The PL external QE does not exceed 4% [3,4] and the maximum EL external QE is about 1.1 % with a power efficiency of about 0.35% [1,5]. The latter must be improved up to at least 1% for practical use.…”

Section: Introductionmentioning

confidence: 99%

Improved Optoelectronic Characteristics of Nanocrystalline Porous Silicon by High-Pressure Water Vapor Annealing

2004

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A high-pressure H 2 O vapor annealing technique has been applied to nanocrystalline porous silicon (PS). The effects on the photoluminescence (PL) are reported here for PS samples of different initial porosities, in different conditions of the annealing pressure. A drastic enhancement of the PL intensity has been achieved, while both the emission band and the peak wavelength remain almost unchanged. The best results have been obtained with an initial PS porosity of about 68 %. The resulting layers consist of Si nanocrystals embedded into an SiO 2 tissue. The high external quantum efficiency obtained in treated PS (23%) may be attributed mainly to a very high surface passivation by high quality oxide and an enhancement in the localization of photoexcited carriers.

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“…However, high PL quantum efficiency of Si nanocrystals [71][72][73][74][75][76] cannot always be explained by the enhanced radiative rate. It arises mainly from restriction of carrier transport within nanocrystals.…”

Section: Pl Quantum Efficiency Of Intrinsic Si Nanocrystalsmentioning

confidence: 99%

Optical Properties of Intrinsic and Shallow Impurity‐Doped Silicon Nanocrystals

Fujii

2010

Silicon Nanocrystals

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The electronic band structure of silicon (Si) crystals is significantly modified when the size is reduced to below the exciton Bohr radius ($4.9 nm) of bulk Si crystals due to the quantum size effect. The quantum size effect manifests itself as a high-energy shift of the luminescence band and an enhancement of the spontaneous emission rate. Furthermore, enlargement of the singlet-triplet splitting energy of exciton states with decreasing size has been demonstrated [1-4]. The modified band structure opens up new application of Si nanocrystals in the fields where bulk Si crystal has not been involved. Besides well-known high-efficiency visible photoluminescence (PL), one of the most exotic new feature of Si nanocrystals is their ability to generate a kind of active oxygen species called singlet oxygen by energy transfer from excitons to oxygen molecules (O 2 ) adsorbed onto the surface of Si nanocrystals [5]. This feature is due to the molecule-like energy structure of Si nanocrystals and is a direct consequence of the quantum size effects. Similarly, efficient photosensitization of rare earth ions by Si nanocrystals has been reported and this phenomenon is expected to lead to the development of an efficient planar waveguide-type optical amplifier operating at the optical telecommunication wavelength. Since almost all new features of Si nanocrystals arise from the modified electronic band structure, its deep understanding is indispensable to explore new nano-Si-based research fields and devices. Fortunately, the energy structure of Si nanocrystals is almost clarified, at least qualitatively, by detailed optical spectroscopy. In Section 3.2, we briefly summarize fundamental optical properties of intrinsic Si nanocrystals [1][2][3][4][5][6][7][8].The properties of Si nanocrystals can be controlled by the size, shape, surface termination, and so on. An additional freedom of material design can be introduced by impurity doping. The introduction of shallow impurities in a semiconductor significantly modifies its optical and electrical transport properties. Actually, a precise control of an impurity profile is key to achieve desirable functions in almost all kinds Silicon Nanocrystals: Fundamentals, Synthesis and Applications. Edited by Lorenzo Pavesi and Rasit Turan

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Evaluation of quantum efficiency of porous silicon photoluminescence

Cited by 27 publications

References 8 publications

Silicon Nanocrystals in Porous Silicon and Applications

Silicon Nanocrystals in Porous Silicon and Applications

Improved Optoelectronic Characteristics of Nanocrystalline Porous Silicon by High-Pressure Water Vapor Annealing

Optical Properties of Intrinsic and Shallow Impurity‐Doped Silicon Nanocrystals

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