Evaluation of quasi-hermetic packaging solutions for active microwave devices and space applications

Naceur, W. Ben; Malbert, Nathalie; Labat, Nathalie; Frémont, Hélène; Muraro, Jean-Luc; Monfraix, P.

doi:10.1109/esime.2012.6191705

Cited by 2 publications

(5 citation statements)

References 10 publications

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“…Inversely, the SiNx passivation experiences up to 181 MPa when its geometric singularities are taken into account. These results have been correlated with the cracks areas observed previously [2] on non-hermetic tested devices under reverse bias. This proves the usefulness of thermo-mechanical analysis to complete failure analysis under THB aging life test.…”

Section: Discussionsupporting

confidence: 86%

“…In a previous work on the same technology of GaAs microwave [2], several cracks have been observed in the SiNx passivation layer ( Figure 11) and also in the gate metal ( Figure 12). This crack induces a large degradation of drain current monitored during THB test.…”

Section: Discussionmentioning

confidence: 72%

“…This result suggests leads us to claim that the failure of the passivation layer is directed linked to architectural failure and thermo-mechanical stresses must be considered in the failure analysis. The author [2] also explains these failures (Figure 12) by the existing internal stresses added to the induced stresses (thermo-mechanical and hydro-mechanical stresses). Due to the linearity of stress state, any initial stress state, once determined, can simply be added to the results presented.…”

Section: Discussionmentioning

confidence: 99%

“…In section 5, the models developed are used to quantify thermo-mechanical stresses induced by heating for a specific multilayer stack (GaAs/Ti/AIiAu/SiNx/SiOylSiNx) of the gate finger area. Results are then correlated with cracks studied in [2] on non-hermetic tested devices with reverse bias.…”

Section: Introductionmentioning

confidence: 99%

“…The results indicate compression of metal gate (Ti/AI/Au) and tensile stress concentration in the SiNx passivation layer. The outcomes is compared with THB test results from [2] and suggests that stress induced by heating must be considered to explain failure during THB test. …”

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confidence: 99%

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Thermo-mechanical analysis of GaAs devices under temperature-humidity-bias testing

Adokanou

Inal

Montmitonnet

et al. 2015

2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and

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International audienceAccelerated life tests on microelectronic devices are needed to estimate their degradation under severe environment. THB (Temperature Humidity Bias) [1] at 85°C and 85%RH (relative humidity) is commonly used for reliability studies. Empirical acceleration laws, used for THB test take into account the temperature change (from 22°C to 85°C), but they do not quantify its impact of the corresponding thermo-elastic stress which it adds to the residual stress in the die and of possible microstructure changes. The aim of this work is to determine the thermo-mechanical stresses induced in the active layer of a Gallium Arsenide (GaAs) chip by the THB test. They are due to the mismatch in Coefficients of Thermal Expansion (CTE) between the stack of thin film materials used as metallurgic interconnection and the intermediate dielectric layers above the active area of the chip. To estimate this stress, fist layers thicknesses measurement have been made with various techniques; second few configurations have been used to simulate heating and finally " complete " 2D Finite Element Analysis (FEA) has been performed. Elastic and thermo-physical materials data come from the literature. The results indicate compression of metal gate (Ti/Al/Au) and tensile stress concentration in the SiNx passivation layer. The outcomes is compared with THB test results from [2] and suggests that stress induced by heating must be considered to explain failure during THB test

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Section: Discussionsupporting

confidence: 86%

Section: Discussionmentioning

confidence: 72%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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confidence: 99%

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