Understanding the role of defects in hybrid organic inorganic perovskites (HOIPs) is critically important to engineer the stability and performance of photovoltaic devices based on HOIPs. Recent reports on multi-cation compositions of general formula (A 1 ,A 2 ,A 3 ,A 4)Pb(X 1 ,X 2 ,X 3) 3 , where the A sites can be occupied by a distribution of 2-4 metallic/ organic cations and X sites with halide anions have shown stabilization effects against the well-known methyl ammonium lead triiodide (CH 3 NH 3 PbI 3), although the underlying mechanism is not fully elucidated. Herein, polycrystalline layers of 4APb(IBr) 3 perovskite, where A is occupied by a combination of Cs + (cesium ion), GA + (guanidinium), MA + (methylammonium), and FA + (formamidinium) ions were synthesized. To gain insight on the role of intrinsic defects, electron irradiation was used for introducing point defects in a controlled way in the quadruple-cation HOIPs. Our results show that the engineered defects in perovskites strongly influenced the absorption, photoluminescence, and time-resolved photoluminescence of these materials, probably due to introduction of additional energy levels that modify electronic and light emitting properties of the material. Furthermore, the irradiation-induced defects were found to strongly affect the aging behavior of HOIPs and modify their radiative recombination properties.