Evaluation of Semiconductor Thin-Films through Thermal Conductivity by Photoacoustic Method

Takabatake, Nobuya; Kobayashi, Takeshi; Fujiya, Masaharu; Izumi, Tomio

doi:10.2963/jjtp.17.270

Cited by 2 publications

(2 citation statements)

References 19 publications

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“…By performing an analysis using heat conduction into the sample, the interior of a sample with a multilayered structure can be evaluated. There are also reports of the use of two-dimensional distribution measurements [photoacoustic microscopy (PAM)] to visualize primary defects and secondary defects [12] that occur in the process of annealing of a semiconductor subjected to ion injection, and of evaluation of the uniformity of a diamond layer based on changes in the local thermal properties. There are also reports of the use of two-dimensional distribution measurements [photoacoustic microscopy (PAM)] to visualize primary defects and secondary defects [12] that occur in the process of annealing of a semiconductor subjected to ion injection, and of evaluation of the uniformity of a diamond layer based on changes in the local thermal properties.…”

Section: Introductionmentioning

confidence: 99%

“…There are reports of a method based on the use of the thermophysical properties of the sample, in which the thermal propagation rate in polycrystalline diamond [9] or an ion injection layer [10] is measured by using an intensitymodulated incident optical beam to determine the frequency characteristics of the PA signal from the differences in the propagation characteristics of thermal waves. There are also reports of the use of two-dimensional distribution measurements [photoacoustic microscopy (PAM)] to visualize primary defects and secondary defects [12] that occur in the process of annealing of a semiconductor subjected to ion injection, and of evaluation of the uniformity of a © 2013 Wiley Periodicals, Inc.…”

Section: Introductionmentioning

confidence: 99%

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Measurement of photoacoustic signals of depletion layer in planar metal–semiconductor–metal structure

Murakami

Takabatake

Satō

et al. 2013

Elect Comm in Japan

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The photoacoustic signal from the depletion layer formed within a planar metal-semiconductor-metal (MSM) structure was detected using the photoacoustic method. To measure the distribution of the photoacoustic signal from the depletion layer, the surface of the sample was illuminated and scanned by an intensity-modulated optical beam. The amplitude and phase shifts of the observed signal increased with an increase in the reverse bias in the Schottky barrier. The intensity distribution of the photoacoustic signal corresponded closely to the position of the photocurrent distribution, showing the presence of the depletion layer as measured by the photoelectric method. This demonstrates clearly that the photoacoustic signal reflects the presence of the depletion layer in semiconductor materials, and that the photoacoustic method can be used effectively for the visualization of the depletion layer.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Measurement of photoacoustic signals of depletion layer in planar metal–semiconductor–metal structure

Murakami

Takabatake

Satō

et al. 2013

Elect Comm in Japan

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Measurement of Photoacoustic Signals of Depletion Layer in Planar Metal-Semiconductor-Metal Structure

et al. 2011

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The photoacoustic signal from the depletion layer formed within a planar metal–semiconductor–metal (MSM) structure was detected using the photoacoustic method. To measure the distribution of the photoacoustic signal from the depletion layer, the surface of the sample was illuminated and scanned by an intensity‐modulated optical beam. The amplitude and phase shifts of the observed signal increased with an increase in the reverse bias in the Schottky barrier. The intensity distribution of the photoacoustic signal corresponded closely to the position of the photocurrent distribution, showing the presence of the depletion layer as measured by the photoelectric method. This demonstrates clearly that the photoacoustic signal reﬂects the presence of the depletion layer in semiconductor materials, and that the photoacoustic method can be used eﬀectively for the visualization of the depletion layer. © 2013 Wiley Periodicals, Inc. Electron Comm Jpn, 96(2): 65–70, 2013; Published online in Wiley Online Library (wileyonlinelibrary.com). DOI 10.1002/ecj.10402

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Evaluation of Semiconductor Thin-Films through Thermal Conductivity by Photoacoustic Method

Cited by 2 publications

References 19 publications

Measurement of photoacoustic signals of depletion layer in planar metal–semiconductor–metal structure

Measurement of photoacoustic signals of depletion layer in planar metal–semiconductor–metal structure

Measurement of Photoacoustic Signals of Depletion Layer in Planar Metal-Semiconductor-Metal Structure

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