Evaluation of Single-Event Effect Current-Carrier Mapping Based on Experimental Data

Abstract

For single-event radiation damage of power MOSFET devices, this paper aims to establish a statistical analysis method based on external observation (gate/drain current characteristics in irradiation environment) to recognize and evaluate the radiation evolution process and damage mechanism of microscopic physical quantities inside the devices, namely current-carrier (CC) mapping. Firstly, a special data fluctuate–collapse transform analysis method is proposed according to the temporal characteristics of the gate/drain current. Secondly, a carrier dynamic balance ratio based on current data is defined to evaluate the radiation damage degree of the device. TCAD is used to deeply study the relationship between the external current characteristics and the evolution process of internal physical quantities and the damage mechanism. The results show that the current data timing analysis based on fluctuate–collapse transformation can better peer into the evolution process of irradiation events inside the device, and the statistical analysis based on the dynamic balance ratio of carriers can evaluate the severity of irradiation damage to a certain extent.