Evaluation of spin-transfer-torque efficiency using magnetization reversal against a magnetic field: comparison of FeCr with negative spin polarization and NiFe

Suto, Hirofumi; Nakatani, Takako; Asam, Nagarjuna; Iwasaki, H.; Sakuraba, Yuya

doi:10.35848/1882-0786/acb310

Cited by 8 publications

(2 citation statements)

References 37 publications

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“…In negative spin polarization materials, the spin momentum direction of the spin-polarized conduction electron is opposite to the magnetization direction. 16,17 This relation is in contrast to the standard positive spin polarization found in the aforementioned Co-based Heusler alloys and many other spintronic materials. Intriguingly, negative spin polarization materials can reverse the signs of MR and STT.…”

Section: Introductionmentioning

confidence: 62%

Negative spin polarization of Mn2VGa Heusler alloy thin films studied in current-perpendicular-to-plane giant magnetoresistance devices

Suto,

Barwal,

Simalaotao

et al. 2024

Journal of Applied Physics

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Magnetic materials with high negative spin polarization have been sought as a building block to increase the design freedom and performance of spintronics devices. In this paper, we investigate negative spin polarization of Mn2VGa Heusler alloy in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices. We fabricated an epitaxial CPP-GMR stack consisting of Mn2VGa/Ag/CoFe with L21 ordering in the Mn2VGa layer and observed negative magnetoresistance (MR), which provided evidence of negative spin polarization. The MR ratio depended on thermal treatments (deposition at an elevated temperature and post-annealing), because these processes affected the ordering, roughness, and magnetic properties of Mn2VGa. The maximum MR ratio reached −1.8% at room temperature and −3.0% at low temperatures, representing the highest among the negative MR values in pseudo-spin-valve CPP-GMR devices despite the underestimation due to an incomplete antiparallel magnetization configuration. These findings demonstrate the potential of Mn2VGa for a material with high negative spin polarization.

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Section: Introductionmentioning

confidence: 62%

Negative spin polarization of Mn2VGa Heusler alloy thin films studied in current-perpendicular-to-plane giant magnetoresistance devices

Suto,

Barwal,

Simalaotao

et al. 2024

Journal of Applied Physics

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“…Initially, a spin-polarized current through a ferromagnetic (FM) layer was used to drive the DWs. This effect is known as the spin-transfer torque. − Around a decade ago, it was found that the current density for driving the DWs can be reduced at least by a factor of 10 by utilizing the spin–orbit torque (SOT) from the heavy metal layer, deposited adjacent to the FM layer. ,− Therefore, Sengupta et al emulated the functionalities of energy-efficient neurons and synapses using a SOT-driven DW-magnetic tunnel junction (MTJ) device in 2015. ,, …”

Section: Introductionmentioning

confidence: 99%

Diode Characteristics in Magnetic Domain Wall Devices via Geometrical Pinning for Neuromorphic Computing

Rahaman

Kumar

Chung

et al. 2023

ACS Appl. Mater. Interfaces

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Neuromorphic computing (NC) is considered a potential vehicle for implementing energy-efficient artificial intelligence. To realize NC, several technologies are being investigated. Among them, the spin–orbit torque (SOT)-driven domain wall (DW) devices are one of the potential candidates. Researchers have proposed different device designs to achieve neurons and synapses, the building blocks of NC. However, the experimental realization of DW device-based NC is only at the primeval stage. Here, we have studied pine-tree DW devices, based on the Laplace pressure on the elastic DWs, for achieving synaptic functionalities and diode-like characteristics. We demonstrate an asymmetric pinning strength for DW motion in two opposite directions to show the potential of these devices as DW diodes. We have used micromagnetic simulations to understand the experimental findings and to estimate the Laplace pressure for various design parameters. The study provides a strategy to fabricate a multifunctional DW device, exhibiting synaptic properties and diode characteristics.

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Enhancement of Spin-Torque-Triggered Magnetization Reversal in Pentalayer Ferromagnetic Alloys Through Orange Peel Coupling

Aravinthan,

Bhoomeeswaran,

Sabareesan

et al. 2023

Braz J Phys

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Evaluation of spin-transfer-torque efficiency using magnetization reversal against a magnetic field: comparison of FeCr with negative spin polarization and NiFe

Cited by 8 publications

References 37 publications

Negative spin polarization of Mn2VGa Heusler alloy thin films studied in current-perpendicular-to-plane giant magnetoresistance devices

Negative spin polarization of Mn2VGa Heusler alloy thin films studied in current-perpendicular-to-plane giant magnetoresistance devices

Diode Characteristics in Magnetic Domain Wall Devices via Geometrical Pinning for Neuromorphic Computing

Enhancement of Spin-Torque-Triggered Magnetization Reversal in Pentalayer Ferromagnetic Alloys Through Orange Peel Coupling

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