Evaluation of stability and robustness of poly-Si resistors with different dopant concentrations

Abstract

The stability and robustness of lightly and highly doped poly-Si resistors were evaluated. These resistors exhibited distinct electrical resistance properties and temperature dependences, which can be explained through the grain and grain boundary conduction mechanisms. The resistance shift saturated under the low current stress condition, but continued to increase under the high current stress condition. A novel carrier trapping density model was proposed to explain this behavior. A generalized free energy model that considered stress temperature and stress current dependences was proposed to account for the stability lifetime of a poly-Si resistor based on the resistance shift criterion. Robustness evaluation with transmission line pulse test revealed that the breakdown current exhibited a pulse width dependence which was further explained by a thermal- conduction energy model.

Electron Radiation Effects of Grain-Boundary Evolution on Polycrystalline Silicon in MEMS

“…The conductivity of polycrystalline silicon is significantly influenced by the potential barrier, since the effective mobility of carriers is figured out by the potential barrier, as shown in Equations (1) and (2) [ 11 , 12 , 13 , 14 , 15 , 16 ]. …”

Characterization of ESD-induced electromigration on CMOS metallization in on-chip ESD protection circuit

“…15,16) In contrast to ESD, which instantaneously destroys circuits, the metal used to connect components during regular use is susceptible to a failure phenomenon known as Electromigration. [17][18][19] For metal, the long-term flow of current is akin to many electrons constantly hitting metal particles. Over time, the metal particles may shift in the current direction, as shown in Fig.…”