2009
DOI: 10.1063/1.3264967
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Evaluation of strain balancing layer thickness for InAs/GaAs quantum dot arrays using high resolution x-ray diffraction and photoluminescence

Abstract: The impact of strain-balancing quantum dot superlattice arrays is critical to device performance. InAs/GaAs/GaP strain-balanced quantum dot arrays embedded in p-i-n diodes were investigated via high resolution x-ray diffraction ͑HRXRD͒ and photoluminescence ͑PL͒ as a function of the GaP thickness. A three-dimensional modification of the continuum elasticity theory was proposed and an optimal thickness was determined to be 3.8 ML. HRXRD-determined in-plane strain in superlattices with this range of GaP thicknes… Show more

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Cited by 51 publications
(29 citation statements)
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“…The quantity N IF /N bnd serves as gauge for the stress balance between NCs and an embedding matrix interacting via interface bonds such as Si NCs in SiO 2 or strain-balanced growth of InAs QDs in GaNAs. [13][14][15] High resolution transmission Electron Microscopy (HR-TEM) was used to determine the size of Si NCs grown by segregation from Si-rich dielectrics. Smallest Si NC extensions were found to be 15 Å, and {111}-faceted octahedra dominated the shape of Si NCs up to ca.…”
Section: Applicationsmentioning
confidence: 99%
“…The quantity N IF /N bnd serves as gauge for the stress balance between NCs and an embedding matrix interacting via interface bonds such as Si NCs in SiO 2 or strain-balanced growth of InAs QDs in GaNAs. [13][14][15] High resolution transmission Electron Microscopy (HR-TEM) was used to determine the size of Si NCs grown by segregation from Si-rich dielectrics. Smallest Si NC extensions were found to be 15 Å, and {111}-faceted octahedra dominated the shape of Si NCs up to ca.…”
Section: Applicationsmentioning
confidence: 99%
“…In order to mitigate the effects of InAs QD induced compressive strain, a GaP-based strain balancing layer was employed according to the method discussed in Bailey et al [13]. The strain balance layer has previously been shown to result in improved one sun AM0 short circuit currents and reduction in defect density [10].…”
Section: Methodsmentioning
confidence: 99%
“…In addition, we have developed a three dimensionally modified version of continuum elastic theory (CET) for the prediction of GaP thickness intended for the compensation of the strain induced by multiple stacks of SK-grown InAs QD on GaAs [3]. HRXRD was used to experimentally verify the appropriate strain balancing predicted by the modified theory.…”
Section: Summary Of Each Task During Phase 1 (Pre Go/no-go)mentioning
confidence: 99%
“…The current software neglects the three-dimensional nature of the strain distribution which gives rise to these discrepancies in transition energies. Although this approach remains suitable for the purpose of predicting trends at the device level, efforts are underway to improve the accuracy of the quantum model using external software such as nextnano 3 . We are continuing to improve our simulation capability through new funding from the DoE Next Generation II program with UCLA.…”
Section: X Qd Single Junctionmentioning
confidence: 99%