Evaluation of Surface Recombination Velocity on CdTe Radiation Detectors by Time-of-Flight Measurements

Suzuki, Kazuhiko; Shiraki, Hiroyuki

doi:10.1109/tns.2009.2019276

Cited by 13 publications

(4 citation statements)

References 10 publications

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“…The sample was irradiated by a 325-nm laser pulse; the laser pulse was irradiated on the top transparent conductive-oxide electrode, through the glass side, as represented in Figure 2. 36 It is assumed that the light transmitted through the glass is completely absorbed from CdTe and produce a charge carrier. Considering the absorption coefficient of CdTe, this is an appropriate assumption.…”

Section: Measurementsmentioning

confidence: 99%

Electron‐radiation effect on Freon‐gas‐treated CdTe solar cells

Kim

Song

Kim

et al. 2022

Intl J of Energy Research

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Summary In this study, CdTe solar cells were fabricated, with 12%‐13% efficiencies, using CdCl2 dipping and Freon gas treatments and irradiated with a 6‐MeV electron beam of various fluences. The efficiency of the CdCl2‐dipped samples decreased by approximately 61% at a dose of 1 × 1016 e/cm2, while that of the Freon‐gas‐treated samples was reduced by only 43%. The measured external quantum efficiencies indicated that the short‐circuit current density (Jsc) values of the treated devices differed significantly under the electron‐beam irradiation. The Jsc of the CdCl2‐dipped samples decreased from 23.5 to 10.8 mA/cm2, while that of the Freon‐gas‐treated samples decreased from 24.7 to 16.4 mA/cm2. The drift mobility values, derived through time‐of‐flight measurements, decreased by approximately 1000 times in the CdCl2‐dipped device and by ~100 times in the Freon‐gas‐treated device at a dose of 1 × 1016 e/cm2. These results reveal that in electron‐beam‐irradiated devices, the treatment method influences the reduction in Jsc.

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Section: Measurementsmentioning

confidence: 99%

Electron‐radiation effect on Freon‐gas‐treated CdTe solar cells

Kim

Song

Kim

et al. 2022

Intl J of Energy Research

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“…Besides, some internal physical information in semiconductors can be derived from current waveforms (CW) of ToF measurement, such as the interaction of carriers with traps and electric field distribution. [16][17][18][19] A study of temperaturedependent mobility of MAPbI 3 by ToF was caried out first in 2018. [20] The characteristics of the trapping-de-trapping of carriers in PSC defects have been clearly uncovered by the pulsed bias ToF method combined with Monte Carlo simulation.…”

Section: Introductionmentioning

confidence: 99%

Investigation of transport properties of perovskite single crystals by pulsed and DC bias transient current technique

Qin

Cao²,

Xu³

et al. 2022

Chinese Phys. B

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Time of flight (ToF) transient current method is an important technique to study the transport characteristics of semiconductors. Here, both the (direct current) DC and pulse bias ToF transient current method were employed to investigate the transport properties and electric field distribution inside the MAPbI3 single crystal detector. Due to the almost homogeneous electric field built inside the detector during pulse bias ToF measurement, the free hole mobility can be directly calculated to be about 22 cm2V-1s-1, and the hole lifetime is around 6.5-17.5 μs. Hence, the mobility-lifetime product can be derived to be 1.4-3.9×10-4 cm2V-1. The transit time measured under the DC bias deviates with increasing voltage compared with that under the pulse bias, mainly arising from the inhomogeneous electric field distribution inside the perovskite. The positive space charge can then be deduced to increase from 3.1×1010 cm-3 to 6.89 ×1010 cm-3 in the bias range of 50-150 V. The ToF measurement can provide us a facile way to accurately measure the transport properties of the perovskite single crystals, and is helpful to obtain a rough picture of the internal electric field distribution as well.

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“…Extraction of surface recombination rates in addition to bulk carrier lifetimes has been demonstrated in semi-insulating substrates using time-of-flight measurements. 19 In diamond, however, the hard to implement combination of low injections and low voltages is required for reliable detection of surface recombination due to very high carrier mobilities in this material. 20 Additional difficulties in data interpretation can arise due to local electric fields induced by surface trapping, as shown in the case of evaporated contacts.…”

Section: Introductionmentioning

confidence: 99%