Evaluation of Temperature Stability of Trilayer Resistive Memories Using Work-Function Tuning

Abstract

A trilayer resistive memory with a low picojoule switching energy shows highly uniform current distribution, fast switching speed of 10 ns, and robust endurance cycling of 10 6 cycles under high-temperature (343 K) operation. Such good performance is related to high-temperature stable Ni electrode, fast electron hopping via nanocrystallized anatase TiO 2 , and nonuniform electric-field distribution to dilute cycling stress. The evaluation of thermal stability is mandatory for the application of reliable high-density three-dimensional nonvolatile memory.

Improved high‐temperature switching characteristics of Y2O3/TiOx resistive memory through carrier depletion effect

“…2(a) displays the calculated active energy ( E a ) for Y 2 O 3 /TiO x RRAM device according to the HRS and LRS resistances at different temperatures (from 25 °C to 125 °C), which are obtained at 0.5 V read under 1.8 V set/ –2 V reset operations. The extracted results reveal negative E a values for the device ( E a (HRS) = –0.02 eV, E a (LRS) = –0.05 eV), which implies that the conduction behaviors are metallic (positive TC) in TiO x 23, 24. Although the Ni/Y 2 O 3 /TaN device has no RRAM memory property, this metallic behaviour has been confirmed in Ni/TiO x /TaN device.…”