Evaluation of the Coulomb-limited mobility in high-κ dielectric metal oxide semiconductor field effect transistors

Casterman, D.; Souza, M.M. De

doi:10.1063/1.3319558

Cited by 13 publications

(9 citation statements)

References 25 publications

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“…[25][26][27] The mobility reduction has also been ascribed to nitrogen diffusing down to the channel/dielectric interface. [28][29][30] From the device modeling perspective, models for RemQ charge scattering are assessed 19,[31][32][33] and a model for the DipQ has been proposed by these authors in Ref. 17.…”

Section: Introductionmentioning

confidence: 99%

On the origin of the mobility reduction in n- and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks

Toniutti

Palestri

Esseni

et al. 2012

Journal of Applied Physics

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We examine the mobility reduction measured in hafnium-based dielectrics in n-and p-MOSFETs by means of extensive comparison between accurate multi-subband Monte Carlo simulations and experimental data for reasonably mature process technologies. We have considered scattering with remote (soft-optical) phonons and remote Coulomb interaction with single layers and dipole charges. A careful examination of model assumptions and limitations leads us to the conclusion that soft optical phonon scattering cannot quantitatively explain by itself the experimental mobility reduction reported by several groups for neither the electron nor the hole inversion layers. Experimental data can be reproduced only assuming consistently large concentrations of Coulomb scattering centers in the gate stack. However, the corresponding charge or dipole density would result in a large threshold voltage shift not observed in the experiments. We thus conclude that the main mechanisms responsible for the mobility reduction in MOSFETs featuring Hafnium-based high-j dielectric have not been completely identified yet. Additional physical mechanisms that could reconcile simulations with experimental results are suggested and critically discussed.

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Section: Introductionmentioning

confidence: 99%

On the origin of the mobility reduction in n- and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks

Toniutti

Palestri

Esseni

et al. 2012

Journal of Applied Physics

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“…The degradation of the mobility in presence of high-k oxide has been observed and studied by many authors. This degradation is attributed to scattering mechanisms such as remote Coulomb [6,7,26,27], remote phonon [28] or remote surface roughness scattering [29].…”

Section: Influence Of the Il Eotmentioning

confidence: 99%

Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility

et al. 2013

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scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility. Journal of Computational Electronics, Springer Verlag, 2013, 12, pp.675-684. 10.1007 Multi-scale analysis of the mobility in high-k UTBB-FDSOI Devices and comparison to split-CV measurements. Abstract-A rigorous study of the mobility in high-k metal gate Ultra-Thin Body and Box Fully Depleted SOI (UTBB-FDSOI) devices is done by means of split C-V measurements and advanced simulations. Measurements have been performed for various Interfacial Layer (IL)Equivalent Oxide Thickness (EOT) allowing an investigation of the physical mechanisms responsible for the mobility degradation at high-k/IL interface. The impact of the back bias on transport properties is investigated and mobility enhancement in the forward regime (back gate inversion) is demonstrated. A multi-scale simulation approach is performed and we compared simulated mobility using quantum Non-Equilibrium Green's Functions (NEGF) to semi-classical solvers results using the Kubo Greenwood (KG) approach. We demonstrated good correlations between these solvers comparing phonon and remote Coulomb-limited mobility. However, a clear overestimation of the surface roughnesslimited mobility determined using semi-classical solvers is shown compared to NEGF results. These advanced solvers have been used to reproduce mobility measurements allowing us to calibrate Technology computer aided design (TCAD) mobility models.

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“…The dipole charge density at the SiO 2 /high-k dielectric interface is experimentally estimated at 10 13 cm -2 level [26,28,29] . The mobility suffered severe degradation from the RCS induced by these fixed interface charges and dipole charges [23,26,30,31] . The Ge MOSFET has a similar interlayer/high k dielectric gate stack structure.…”

Section: Introductionmentioning

confidence: 99%

Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeO _x /Al₂O₃ gate stack by ozone oxidation

Zhou¹,

Xiang²,

Wang³

et al. 2022

J. Semicond.

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Ge has been an alternative channel material for the performance enhancement of complementary metal–oxide–semiconductor (CMOS) technology applications because of its high carrier mobility and superior compatibility with Si CMOS technology. The gate structure plays a key role on the electrical property. In this paper, the property of Ge MOSFET with Al2O3/GeO x /Ge stack by ozone oxidation is reviewed. The GeO x passivation mechanism by ozone oxidation and band alignment of Al2O3/GeO x /Ge stack is described. In addition, the charge distribution in the gate stack and remote Coulomb scattering on carrier mobility is also presented. The surface passivation is mainly attributed to the high oxidation state of Ge. The energy band alignment is well explained by the gap state theory. The charge distribution is quantitatively characterized and it is found that the gate charges make a great degradation on carrier mobility. These investigations help to provide an impressive understanding and a possible instructive method to improve the performance of Ge devices.

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Evaluation of the Coulomb-limited mobility in high-κ dielectric metal oxide semiconductor field effect transistors

Cited by 13 publications

References 25 publications

On the origin of the mobility reduction in n- and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks

On the origin of the mobility reduction in n- and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks

Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility

Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeO _x /Al₂O₃ gate stack by ozone oxidation

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Evaluation of the Coulomb-limited mobility in high-κ dielectric metal oxide semiconductor field effect transistors

Cited by 13 publications

References 25 publications

On the origin of the mobility reduction in n- and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks

On the origin of the mobility reduction in n- and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks

Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility

Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeO x /Al2O3 gate stack by ozone oxidation

Contact Info

Product

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About

Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeO _x /Al₂O₃ gate stack by ozone oxidation