Evaluation of the KASI Detector Performance Test System Using an Andor iKon M CCD Camera

Abstract

The characterization of detectors installed in space- and ground-based instruments is important to evaluate the system performance. We report the development of a detector performance test system for astronomical applications using the Andor iKon M CCD camera. The performance test system consists of a light source, monochromator, integrating sphere, and power meters. We adopted the Czerny–Tuner monochromator with three ruled gratings and one mirror, which covers a spectral range of 200–9,000 nm with a spectral resolution of ~1 nm in the visible region. Various detector characteristics, such as the quantum efficiency, sensitivity, and noise, can be measured in wide wavelength ranges from the visible to mid-infrared regions. We evaluated the Korea Astronomy and Space Science Institute (KASI) detector performance test system by using the performance verification of the Andor iKon-M CCD camera. The test procedure includes measurements of the conversion gain (2.86 e−/ADU), full well capacity (130 K e−), nonlinearity, and pixel defects. We also estimated the read noise, dark current, and quantum efficiency as a function of the temperature. The lowest measured read noise is 12 e−. The dark current at 223 K was determined to be 7 e−/s/pix and its doubling temperature is 5.3°C ± 0.2°C at an activation energy of 0.6 eV. The maximum quantum efficiency at 223 K was estimated to be 93 % ± 2 %. We proved that the quantum efficiency is sensitive to the operating temperature. It varies up to 5 % in the visible region, while the variation increases to 30 % in the near-infrared region. Based on the comparison of our results with the test report by the vendor, we conclude that our performance test results are consistent with those from the vendor considering the test environment. We also confirmed that the KASI detector performance test system is reliable and our measurement method and analysis are accurate.

Research on a back-illuminated CMOS sensor for LUV imaging

“…to 1100 nm, the highest temperature corresponds to the highest QE. From 300 nm to 380 nm, the temperature effect on the QE is small [21]. In general, for shorter wavelength, such as LUV band, the change in QE with temperature is typically not due to the temperature itself but to the backside surface physics, like thickness, and manufacturing process [22].…”