Evaluation of the photoinduced electron relaxation dynamics of Cu1.8S quantum dots

Abstract

Cu 1.8 S quantum dots were prepared by using a single-source-precursor type method and investigated in the light of opto-electronic applications. With femtosecond time-resolved transient absorption measurements, the electron relaxation as well as their trapping dynamics could be evaluated. The measurements reveal that the largest and the smallest QD samples prepared exhibit the longest mobility lifetimes, and that the electron-hole relaxation dynamics is strongly dependent on the occurrence of trapping sites. Based on the argument of optical response, it appears that the largest prepared Cu 1.8 S QDs with band gap energy of 2.35 eV are preferred candidates for opto-electronic device fabrication.y Dedicated to Professor Dr Z. R. Grabowski and Professor Dr J. Wirz on the occasions of their 75th and 60th birthdays.

Morphology and Composition-Controls of Cu<I><SUB>x</SUB></I>S Nanocrystals Using Alkyl-Amine Ligands

“…Copper sulfide NCs with anomalous optical properties are expected to be a efficient third-order nonlinear optical materials 1) and hetero-junction solar cell materials, 2) while a Cu 2 S thin film is applicable for an electrolyte-capacitated quantum atom switch. 3) Such a copper sulfide group (Cu x S) involves various compounds, Cu 2 S(chalcocite), Cu 1;96 S(djurleite), Cu 1:8 S(digenite) and CuS(covellite).…”

Quantum Size Effects in the Photonics of Semiconductor Nanoparticles

“…4) [261]. The relations between the positions of the exciton and "defect" emission maxima and the particle size were obtained for nanoparticles of CdS [21, 42, 46, 77-79, 82, 83, 90, 92, 98, 99, 114, 116, 118, 119, 123, 126, 130, 131, 133, 138, 139, 305-307], HgS [83,144], MoS 2 [160], ZnS [83,[152][153][154][155][156]308], PbS [163,167,168], In 2 S 3 [158], Cu x S [174], CdSe [24, 46, 48, 71, 205, 212-223, 226, 228, 229, 253, 309], CdSe/ZnS [234,235], CdSe/CdS [223,236], ZnSe [244,245,247], PbSe [73,241,242], HgSe [310], CdTe [51, 253-259, 265, 269, 271, 272, 304, 310, 311], CdSe x Te 1-x [239,240,294], CuInSe 2x Te 2(1-x) [252], AgI [276], AgBr [273], CuBr [279], CuCl [4], PbI 2 [282], ZnO [77, 178-180, 184, 188, 295, 312-315], TiO 2 [190,194], In 2 O 3 [316], CeO 2 [134], Al 2 O 3 …”

“…[162][163][164][165][166][167][168][169][170], Ag 2 S[171], Cu x S[60,61,[172][173][174], FeS 2[175], EuS[176], CuInS 2[177], oxides -ZnO[53][54][55][56][57][178][179][180][181][182][183][184][185][186][187][188], TiO 2…”

Enhanced thermoelectric properties of SiC nanoparticle dispersed Cu1.8S bulk materials

“…Therefore, the cheaper and more environmental friendly TE materials are receiving increased attention. Copper sulfides, in particular, digenite, Cu 2-x S (0 x 1), have been used in some of the earliest thin film solar cell and optoelectronic devices [11,12]. Cu 1.8 S has a stable phase that varies with temperature.…”