Evaluation of the wafer polishing pad capacity and lifetime in the machining of reliable elevations

Lee, Eunsang; Cha, Ji-Wan; Kim, Seong-Hyun

doi:10.1016/j.ijmachtools.2012.11.003

Cited by 15 publications

(10 citation statements)

References 16 publications

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“…Conversely, the harder the polishing pad, the more difficult it is for the GaSb wafers to run in with the polishing pad. Thus, nonuniform surface removal caused by non-uniform friction results in lower surface quality and the RMS roughness values for multipoint tests are more widely distributed (Lee et al, 2013). Although the MRR value for pad B is low, owing to the high hardness, the roughness is greater than for pad A and the RMS roughness values measured have a narrower distribution.…”

Section: Effect Of Polishing Padmentioning

confidence: 97%

Chemical Mechanical Polishing of GaSb Wafers for Significantly Improved Surface Quality

Yan¹,

Liang²,

Liu³

et al. 2021

Front. Mater.

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Gallium antimonide (GaSb) is considered an ideal substrate for heterostructure growth via molecular beam epitaxy. A significant aspect that inhibits the widespread application of infrared plane-array detector growth on GaSb is the starting substrate surface quality. In this study, the chemical mechanical polishing of GaSb wafers is investigated by considering the effects of the polishing pad, polishing solution, polishing time and pH buffer on their surface morphology and roughness. The surface morphology and root mean square (RMS) roughness of the free-standing wafers are characterized using a white light interferometer, a laser interferometer and an atomic force microscope. X-ray tomography is employed to measure the surface crystalline quality and strain defects of the samples subjected to the polishing treatments. The results show that with the optimum polishing condition, the polished GaSb wafers demonstrate high-quality surfaces without haze, scratches or strain defect regions. The peak to valley value is 5.0 μm and the RMS roughness can be controlled at less than 0.13 nm. A buffer layer grown on the GaSb surface with molecular beam epitaxy is examined via atomic force microscopy and high-resolution X-ray diffraction, which show a low RMS roughness of 0.159 nm, a well-controlled two-dimensional growth mode and a full width half maximum of the Bragg diffraction peak of 14.2”, indicating high-quality GaSb wafers. Thus, this work provides useful guidelines for achieving GaSb wafers with high-quality surfaces that show significant promise for substrate applications.

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Section: Effect Of Polishing Padmentioning

confidence: 97%

Chemical Mechanical Polishing of GaSb Wafers for Significantly Improved Surface Quality

Yan¹,

Liang²,

Liu³

et al. 2021

Front. Mater.

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“…However, when the applied voltage is over 8 V, the surface is destroyed, as shown in Fig. 6 [13,14]. This is a defect from over-machining by the fast electrochemical dissolution process.…”

Section: Surface Analysesmentioning

confidence: 99%

Pulse electrochemical machining on Invar alloy: Optical microscopic/SEM and non-contact 3D measurement study of surface analyses

Kim

Choi

et al. 2014

Applied Surface Science

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“…The surface of a processed material can be evaluated using an AE polar map in ultraprecision turning [10]. The frequency characteristics of AE signals are obtained through fast Fourier transform (FFT) analysis [11,12]. Wavelet analysis is a suitable method for locally analyzing both the frequency and time domains [13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Analysis of the Optical Quartz Lens Centering Process Based on Acoustic Emission Signal Processing and the Support Vector Machine

Liu

Shiu

2021

Preprint

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A method was proposed for analyzing the optical glass lens centering process, and experiments on biplane quartz lenses were performed to determine the material removal rate (MRR) for the hard, brittle material. This study used acoustic emission–sensing technology to monitor the MRR and reconstruct the original shape of the lens. The MRR was evaluated, and an error of 17.87% was obtained. A Taguchi experiment was combined with signal analysis to optimize the process parameters, and a support-vector machine was trained to classify the quality of the grinding wheel; the model had accuracy 98.8%. By using the proposed analysis method, workpiece quality was controlled to an edge surface roughness of <2 μm, a lens circularity error of <0.01 mm, a crack length of <E0.1, and an optical axis error of <150 μrad.

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Evaluation of the wafer polishing pad capacity and lifetime in the machining of reliable elevations

Cited by 15 publications

References 16 publications

Chemical Mechanical Polishing of GaSb Wafers for Significantly Improved Surface Quality

Chemical Mechanical Polishing of GaSb Wafers for Significantly Improved Surface Quality

Pulse electrochemical machining on Invar alloy: Optical microscopic/SEM and non-contact 3D measurement study of surface analyses

Analysis of the Optical Quartz Lens Centering Process Based on Acoustic Emission Signal Processing and the Support Vector Machine

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