Abstract:The formation condition, microstructure, and growth kinetics of the WO X layer for WO X ReRAM are investigated. To understand the optimal condition for the rapid thermal oxidation process which forms the WO X layer, various annealing temperature and annealing time are systemically studied through TEM, XRD, Raman spectra analyses and electrical characterizations. The growth kinetics for WO X under RTO is found similar to the one for thermal oxidation on silicon. The electrical forming voltages of the WO X cells… Show more
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