Evaluation of Threshold-Voltage Variation in Silicon on Thin BOX (SOTB) CMOS and its Impact on Decreasing Standby Leakage Current

Abstract

IntroductionIncreasing power consumption is a serious problem in the current scaled CMOS because the supply voltage does not scale down proportionally and the standby leakage current increases. The major cause of this problem is widely recognized to be increasing threshold-voltage (V th ) variation.We proposed a new FDSOI structure (Fig. 1) named Silicon on Thin BOX (SOTB) [1], which can be controlled by the back-gate bias, and have shown that it has a small V th variation about half that of the conventional bulk CMOS [2]. In this study, we systematically investigated the V th variation of SOTB and estimated the effect of a small V th variation on decreasing the leakage current.