Evaluation of Trisilylamine for HfSiOx Atomic Layer Deposition

Abstract

Hafnium silicon oxide thin films were grown by atomic layer deposition using a typical hafnium precursor (TDEAH, Hf(NEt2) 4), and a newly considered silicon precursor, trisilylamine (TSA, (SiH3)3N) with an ozone/oxygen mixture. The TSA molecule is a highly volatile molecule (315 Torr at 25 C) and is therefore easy to deliver into the reactor. TSA has the additional advantage of being carbon-free, hence minimizing the carbon incorporation. Deposits that were obtained exhibited smooth, featureless surfaces when deposited between 200 and 275 C at 1 Torr in a hot wall reactor.

Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2

“…A remote O 2 plasma was used during the oxidation step in the ALD cycle. SAM.24 (Air Liquide) was used as the Si precursor (Figure 1a) [17,18]. This is a liquid (melting point < -10 o C) which exhibits a high vapor pressure, i.e.…”

“…In this contribution an efficient plasma-assisted ALD process is demonstrated for the low-temperature synthesis of SiO 2 using H 2 Si[N(C 2 H 5 ) 2 ] 2 as the Si precursor (Figure 1a). This precursor is commercially supplied by Air Liquide under the product name SAM.24 [17,18]. Data are presented for the ALD process within the temperature range of 50-400 o C and the results are compared to the Al 2 O 3 ALD processes from Al(CH 3 ) 3 and H 2 O/O 2 plasma.…”