Evaluation of Y2O3 gate insulators for a-IGZO thin film transistors

Room temperature fabrication Oxide TFT with Y2O3 as a gate oxide and Mo contact

“…Depending the deposition condition and method, the range of dielectric constant values for Y 2 O 3 have been reported. In our study, the dielectric constant of 15 for as-deposited Y 2 O 3 at 120 W RF power and 1:1; Ar to O 2 ratio has been reported [8]. However, the fabricated devices are annealed in the ambient of N 2 + 5% H 2 at 400 8C for 2 h. Thus, it is essential to evaluate performance of gate oxide.…”

“…The dielectric constant which has been used to determine the mobility is an average value measured on five different devices. The leakage current density for as-deposited Y 2 O 3 has been reported to be 10 À9 A/cm 2 for 100 nm thick layer [8]. The observed gate leakage current density on the deterioration of Y 2 O 3 is higher by the 10 order of magnitude compare to the MIM structure.…”

Selection of Gate Dielectrics for ZnO Based Thin-Film Transistors

“…La 2 O 3 has a very high subthreshold slope of 1.2 V/decade and hence the electrical performance will be poorer in comparison to others. Figure 5 shows the relationship between threshold voltage and dielectric constant based on the data obtained in [5][6][7][8][9][10][11]. The values are highly scattered as threshold voltage depends on some other factors also.…”

“…Hence we found that HfO 2 , Y 2 O 3 , La 2 O 3 and ZrO 2 are the possible candidates that satisfy the constraints of high dielectric constant and a considerable band gap and conduction band offset. Figure 4 shows the relationship between subthreshold slope and and dielectric constant based on the data obtained in [5][6][7][8][9][10][11]. It can be observed that all the materials except La 2 O 3 have subthreshold slope lying in the range of .18-.23 V/decade.…”

Structural and Electrical Properties of Ga-doped ZnO-SnO2Films

“…투명박막트랜지스터의 성능개선과 함께 투명집적회 로의 실현이 기대되고 있다 [1,2]. 투명집적회로가 개 발되기 위해서는 투명박막트랜지스터와 같은 능동소 자뿐만 아니라 투명저항과 같은 수동소자의 개발도 요구된다.…”