2022
DOI: 10.3390/mi13071096
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Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

Abstract: In this work, temperature-dependent transient threshold voltage (VT) instability behaviors in p-GaN/AlGaN/GaN HEMTs, with both Schottky gate (SG) and Ohmic gate (OG), were investigated systematically, under negative gate bias stress, by a fast voltage sweeping method. For SG devices, a concave-shaped VT evolution gradually occurs with the increase in temperature, and the concave peak appears faster with increasing reverse bias stress, followed by a corresponding convex-shaped VT recovery process. In contrast, … Show more

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Cited by 10 publications
(3 citation statements)
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“…Throughout the years, the investigation of NBTI has attracted significant academic attention, as proven by the group of authors who have contributed to this field [15][16][17][18][19][20][21]. NBTI is investigated across a spectrum of semiconductor components, including FinFETs, integrated circuits (ICs), where the effect can impact the reliability and performance of digital and analog circuits.…”
Section: Polarization Of the Gate Of Vdmos Transistors Nmos Pmosmentioning
confidence: 99%
See 1 more Smart Citation
“…Throughout the years, the investigation of NBTI has attracted significant academic attention, as proven by the group of authors who have contributed to this field [15][16][17][18][19][20][21]. NBTI is investigated across a spectrum of semiconductor components, including FinFETs, integrated circuits (ICs), where the effect can impact the reliability and performance of digital and analog circuits.…”
Section: Polarization Of the Gate Of Vdmos Transistors Nmos Pmosmentioning
confidence: 99%
“…Of particular relevance to this review were power VDMOS transistors [16][17][18]. Several experimental methods have been developed to obtain appropriate experimental data [15,21]. However, the mechanisms that fully explain these experimental data have not yet been thoroughly elucidated and remain the subject of investigation [19,22].…”
Section: Polarization Of the Gate Of Vdmos Transistors Nmos Pmosmentioning
confidence: 99%
“…The GaN high-electron-mobility transistor (HEMT) is a representative of wide-bandgap power semiconductor devices, which has great potential in high-frequency, high-power and high-temperature applications. This is because of the excellent properties of the GaN material [1], such as its higher electron mobility, saturation electron velocity and breakdown electric field, compared with Si and SiC [2][3][4][5][6][7][8]. The applications of GaN HEMT devices in harsh environments such as high-power microwave (HPM), high-power electromagnetic pulse (EMP) and particle irradiation make the reliability issues increasingly prominent.…”
Section: Introductionmentioning
confidence: 99%