2014
DOI: 10.1016/j.sna.2014.09.010
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Evanescent-mode-resonator-based and antenna-integrated wireless passive pressure sensors for harsh-environment applications

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Cited by 56 publications
(46 citation statements)
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“…Electric properties of polymer-derived ceramics (PDCs) have been extensively studied over the last decades due to their potential applications for high-temperature sensors, microelectromechanical systems and energy storage. [1][2][3][4] PDCs exhibited an excellent high-temperature semiconducting behavior up to 1300°C [5][6][7] and ultrahigh piezoresistivity with gauge factors about 1000-4000. [8][9][10] These outstanding properties are attributed to the unique microstructure of PDCs, composing of SiCN amorphous matrix and self-assembled carbon cluster nanodomain (so called free carbon).…”
Section: Introductionmentioning
confidence: 99%
“…Electric properties of polymer-derived ceramics (PDCs) have been extensively studied over the last decades due to their potential applications for high-temperature sensors, microelectromechanical systems and energy storage. [1][2][3][4] PDCs exhibited an excellent high-temperature semiconducting behavior up to 1300°C [5][6][7] and ultrahigh piezoresistivity with gauge factors about 1000-4000. [8][9][10] These outstanding properties are attributed to the unique microstructure of PDCs, composing of SiCN amorphous matrix and self-assembled carbon cluster nanodomain (so called free carbon).…”
Section: Introductionmentioning
confidence: 99%
“…Based on Su's study, the S 11 is an input reflection parameter (ie, the input return loss), and the resonant frequency ( f r ) of the resonator is expressed as 22 fr=12πL(cp+cr),cp=ε0πb24H,where c p represents the parallel‐plate capacitance between the vertical parallel plates, c r represents the remaining fringing capacitance, L denotes the equivalent inductance, ε 0 denotes the relative permittivity of vacuum (8.854 × 10 −12 F /m), and H denotes the distance between the sensor cap (ie, the ceramic film with platinum coating) and the metal base. Figure 13B shows the simulation results of the change in f r with a variation in H , and the detailed simulation process can be obtained in Cheng's study 23 . Because H = 0.2 mm‐ D , the variation in H is equal to the negative variation in D (ie, Δ H = −Δ D ).…”
Section: Resultsmentioning
confidence: 99%
“…Figure 13B shows the simulation results of the change in f r with a variation in H, and the detailed simulation process can be obtained in Cheng's study. 23 Because H = 0.2 mm-D, the variation in H is equal to the negative variation in D (ie, ΔH = −ΔD). Hence, the change in f r with a variation in D can be obtain in Figure 13C.…”
Section: Resultsmentioning
confidence: 99%
“…Literature reports many developments performed on passive pressure sensors with different technologies and devices, such as, e.g., microwave circuits [6] [7], microwave cavity resonators [8], evanescent mode resonator [9], slot antenna integrated resonator [10], capacitive sensors [11], or dielectric resonators [12]. Table I reports some of their characteristics in terms of pressure measurement range, operating frequency fres, full-scale frequency range, and the measurement sensitivity.…”
Section: Introductionmentioning
confidence: 99%