Even hall effect at different ratios of light and heavy holes in p-Ge

Баранский, П. И.; Baidakov, V. V.; Elizarov, A. Yu.

doi:10.1002/pssa.2210320160

Cited by 2 publications

(3 citation statements)

References 6 publications

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“…This effect has been observed in the mixed state of strongly inhomogeneous type-II superconductors [38,39,40] as well as in inhomogeneous semiconductors [41,42].…”

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confidence: 79%

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Integer quantum Hall effect in graphite

Kempa

Esquinazi

Kopelevich

2006

Solid State Communications

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We present Hall effect measurements on highly oriented pyrolytic graphite that indicate the occurrence of the integer quantum-Hall-effect. The evidence is given by the observation of regular plateau-like structures in the field dependence of the transverse conductivity obtained in van der Pauw configuration. Measurements with the Corbino-disk configuration support this result and indicate that the quasi-linear and non-saturating longitudinal magnetoresistance in graphite is governed by the Hall effect in agreement with a recent theoretical model for disordered semiconductors. Recent experimental [1,2,3,4,5,6] and theoretical [7,8,9] work demonstrates the occurrence of correlated phenomena in the electron system of graphite, indicating that the classical view of the physics of its magnetotransport properties is not adequate. Besides, the quantum Hall effect (QHE) [1] as well as evidence for Dirac fermions (massless particles due to the linear dispersion relation) [5] have been reported for bulk samples of highly oriented pyrolytic graphite of high quality. Recently published results obtained on bulk graphite [10,11], a few layers thick graphite [12], and in graphene (single graphite layer) [13,14] have confirmed both observations and showed that in graphene the QHE is anomalous in that the contribution of the Dirac fermions makes the plateaus to occur at half-integer filling factors. Certainly, the understanding of the electronic properties of graphite is necessary for the development of advanced technology of the graphite-related nanomaterials.

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“…This effect has been observed in the mixed state of strongly inhomogeneous type-II superconductors [38,39,40] as well as in inhomogeneous semiconductors [41,42].…”

mentioning

confidence: 79%

“…We would like to note that an even Hall effect that occurs in inhomogeneous materials is a well known phenomenon. This effect has been observed in the mixed state of strongly inhomogeneous type-II superconductors [38,39,40] as well as in inhomogeneous semiconductors [41,42].…”

mentioning

confidence: 79%

Integer quantum Hall effect in graphite

Kempa

Esquinazi

Kopelevich

2006

Solid State Communications

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“…(3) have been taken to be the injected density nz, the conductivity o of Eq. (3) has been recalculated using nE for the carrier density. It is seen that the effect on the calculated conductivity is large, even at the highest temperatures.…”

Section: Comparison Of Theory and Experimentsmentioning

confidence: 99%

Electrical conductivity of germanium as a function of optically injected carrier density and temperature

Meyer

Glicksman

1978

Phys. Rev. B

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The efFects of carrier-carrier scattering on the transport properties of high-density electron-hole plasmas in germanium were studied both experimentally and theoretically. Experimentally, the dh electrical conductivities of nearly uniform optically injected bipolar plasmas in high-purity single crystals of germanium were measured for a broad range of carrier densities (-10"--5 X 10" cm '} and temperatures (21-298 K).Concurrent measurements of the absorption of 3.39-p,m radiation due to inter-hole-band transitions aided the calibration of the carrier densities at some temperature. The previous theory of Appel, which used Kohler's variational principle to solve the Boltzmann equation, was generalized with respect to the inclusion of interband hole scattering, electron mass anisotropy, degeneracy, and use of the RPA g-dependent screening approximation (although not with respect to all at once). The most crucial generalization was the accounting for the presence of nonconducting excitons in the plasma. The scattering of free carriers by excitons was also considered, using a neutral-impurity scattering theory similar to that of Erginsoy. Incorporation of all the above considerations led to excellent agreement between experiment and theory at densities below the Mott criterion for transition to the exciton-free phase. The transition itself appeared to be gradual, however, and behavior of the conductivity in the high-density region. was consistent with the recent assertion by Thomas and Rice that excitons are present at densities significantly above the Mott criterion.

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Even hall effect at different ratios of light and heavy holes in p-Ge

Cited by 2 publications

References 6 publications

Integer quantum Hall effect in graphite

Integer quantum Hall effect in graphite

Electrical conductivity of germanium as a function of optically injected carrier density and temperature

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