Evidence against existing x-ray-energy response theories for silicon-surface-barrier semiconductor detectors

T, Cho; Takahashi, Eiji; Hirata, M.; Yamaguchi, Naohiro; Teraji, Tokuyuki; Matsuda, Kyoko; Takeuchi, Akihisa; Kohagura, J.; Yatsu, K.; Tamano, T.; Kondoh, T.; Aoki, Sadao; Xw, Zhang; Maezawa, H.; Miyoshi, S.

doi:10.1103/physreva.46.r3024

Cited by 54 publications

(5 citation statements)

References 23 publications

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“…The potentials obtained from MD simulations as well as dimer dimensions from tubulin structures were then used as inputs to our BD simulations to model Brownian motion of these heterodimers in solution as well as their assembly into a preassembled MT lattice. Since the time-averaged potentials obtained from MD simulations are equivalent to the canonical ensemble-averaged potentials of tubulin dimers if there is ergodic convergence, 9 , 12 , 54 we used umbrella sampling to ensure sufficient sampling of the ensemble. In our multi-scale framework, each model is separated by different time scales, with the MD simulation ranging from ~ 30 to 100 ns (PMF vs. unconstrained simulations), the typical Brownian dynamics simulation ranging from 10 µ s to 0.5 s, and the thermokinetic modeling ranging from 100 µ s to 20 min.…”

Section: Methodsmentioning

confidence: 99%

Atomistic Basis of Microtubule Dynamic Instability Assessed Via Multiscale Modeling

Hemmat

Odde

2021

Ann Biomed Eng

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Microtubule “dynamic instability,” the abrupt switching from assembly to disassembly caused by the hydrolysis of GTP to GDP within the β subunit of the αβ-tubulin heterodimer, is necessary for vital cellular processes such as mitosis and migration. Despite existing high-resolution structural data, the key mechanochemical differences between the GTP and GDP states that mediate dynamic instability behavior remain unclear. Starting with a published atomic-level structure as an input, we used multiscale modeling to find that GTP hydrolysis results in both longitudinal bond weakening (~ 4 kBT) and an outward bending preference (~ 1.5 kBT) to both drive dynamic instability and give rise to the microtubule tip structures previously observed by light and electron microscopy. More generally, our study provides an example where atomic level structural information is used as the sole input to predict cellular level dynamics without parameter adjustment.

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Section: Methodsmentioning

confidence: 99%

Atomistic Basis of Microtubule Dynamic Instability Assessed Via Multiscale Modeling

Hemmat

Odde

2021

Ann Biomed Eng

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“…10 nm for LEDs, to ca. 1 μm for a solar cell, and to 10–1000 μm for ionizing-radiation (e.g., X-ray or γ-ray) detectors . In these latter cases, this requires overcoming the complications imposed by QD ligands, which are typically highly insulating, long-chain organic surfactants …”

Section: Introductionmentioning

confidence: 99%

Phase-Transfer Ligand Exchange of Lead Chalcogenide Quantum Dots for Direct Deposition of Thick, Highly Conductive Films

et al. 2017

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The use of semiconductor nanocrystal quantum dots (QDs) in optoelectronic devices typically requires postsynthetic chemical surface treatments to enhance electronic coupling between QDs and allow for efficient charge transport in QD films. Despite their importance in solar cells and infrared (IR) light-emitting diodes and photodetectors, advances in these chemical treatments for lead chalcogenide (PbE; E = S, Se, Te) QDs have lagged behind those of, for instance, II-VI semiconductor QDs. Here, we introduce a method for fast and effective ligand exchange for PbE QDs in solution, resulting in QDs completely passivated by a wide range of small anionic ligands. Due to electrostatic stabilization, these QDs are readily dispersible in polar solvents, in which they form highly concentrated solutions that remain stable for months. QDs of all three Pb chalcogenides retain their photoluminescence, allowing for a detailed study of the effect of the surface ionic double layer on electronic passivation of QD surfaces, which we find can be explained using the hard/soft acid-base theory. Importantly, we prepare highly conductive films of PbS, PbSe, and PbTe QDs by directly casting from solution without further chemical treatment, as determined by field-effect transistor measurements. This method allows for precise control over the surface chemistry, and therefore the transport properties of deposited films. It also permits single-step deposition of films of unprecedented thickness via continuous processing techniques, as we demonstrate by preparing a dense, smooth, 5.3-μm-thick PbSe QD film via doctor-blading. As such, it offers important advantages over laborious layer-by-layer methods for solar cells and photodetectors, while opening the door to new possibilities in ionizing-radiation detectors.

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“…Diodes that suffer from recombination have a much more complicated relationship between flux, current, thickness and photon energy (Cho et al, 1992;Gullikson et al, 1995;Lutz, 1999) than the photoconversion ratio described by equation (2). This equation can be used to identify them, since the thickness derived from tilt data by fitting equation (5) will be inconsistent with the energy dependence given by equation (2).…”

Section: Carrier Recombinationmentioning

confidence: 99%

Determination of X-ray flux using silicon pin diodes

et al. 2009

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Accurate measurement of photon flux from an X-ray source, a parameter required to calculate the dose absorbed by the sample, is not yet routinely available at macromolecular crystallography beamlines. The development of a model for determining the photon flux incident on pin diodes is described here, and has been tested on the macromolecular crystallography beamlines at both the Swiss Light Source, Villigen, Switzerland, and the Advanced Light Source, Berkeley, USA, at energies between 4 and 18 keV. These experiments have shown that a simple model based on energy deposition in silicon is sufficient for determining the flux incident on high-quality silicon pin diodes. The derivation and validation of this model is presented, and a web-based tool for the use of the macromolecular crystallography and wider synchrotron community is introduced.

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Evidence against existing x-ray-energy response theories for silicon-surface-barrier semiconductor detectors

Cited by 54 publications

References 23 publications

Atomistic Basis of Microtubule Dynamic Instability Assessed Via Multiscale Modeling

Atomistic Basis of Microtubule Dynamic Instability Assessed Via Multiscale Modeling

Phase-Transfer Ligand Exchange of Lead Chalcogenide Quantum Dots for Direct Deposition of Thick, Highly Conductive Films

Determination of X-ray flux using silicon pin diodes

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