Evidence for chiral supercurrent in quantum Hall Josephson junctions

Vignaud, Hadrien; Perconte, David; Yang, Wenmin; Kousar, Bilal; Wagner, Edouard; Gay, Frédéric; Watanabe, Kenji; Taniguchi, Takashi; Courtois, Hervé; Han, Zheng; Sellier, Hermann; Sacépé, Benjamin

doi:10.1038/s41586-023-06764-4

Nature

2023

DOI: 10.1038/s41586-023-06764-4

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Evidence for chiral supercurrent in quantum Hall Josephson junctions

Hadrien Vignaud,

David Perconte,

Wenmin Yang

et al.

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2024

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Cited by 12 publications

References 43 publications

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Decoupled High‐Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Deposition

Gebeyehu,

Mišeikis,

Forti

et al. 2024

Advanced Materials

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The growth of high‐quality graphene on flat and rigid templates, such as metal thin films on insulating wafers, is regarded as a key enabler for technologies based on 2D materials. In this work, the growth of decoupled graphene is introduced via non‐reducing low‐pressure chemical vapor deposition (LPCVD) on crystalline Cu(111) films deposited on sapphire. The resulting film is atomically flat, with no detectable cracks or ripples, and lies atop of a thin Cu2O layer, as confirmed by microscopy, diffraction, and spectroscopy analyses. Post‐growth treatment of the partially decoupled graphene enables full and uniform oxidation of the interface, greatly simplifying subsequent transfer processes, particularly dry‐pick up — a task that proves challenging when dealing with graphene directly synthesized on metallic Cu(111). Electrical transport measurements reveal high carrier mobility at room temperature, exceeding 104 cm2 V−1 s−1 on SiO2/Si and 105 cm2 V−1 s−1 upon encapsulation in hexagonal boron nitride (hBN). The demonstrated growth approach yields exceptional material quality, in line with micro‐mechanically exfoliated graphene flakes, and thus paves the way toward large‐scale production of pristine graphene suitable for high‐performance next‐generation applications.

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Decoupled High‐Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Deposition

Gebeyehu,

Mišeikis,

Forti

et al. 2024

Advanced Materials

View full text Add to dashboard Cite

show abstract

Edge supercurrent in Josephson junctions based on topological materials

Qi,

Chen,

Song

et al. 2024

Sci. China Phys. Mech. Astron.

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Engineering Superconducting Contacts Transparent to a Bipolar Graphene

Jang,

Park,

Park

et al. 2024

Nano Lett.

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Graphene's exceptional electronic mobility, gate-tunability, and contact transparency with superconducting materials make it ideal for exploring the superconducting proximity effect. However, the work function difference between graphene and superconductors causes unavoidable doping of graphene near contacts, forming a p−n junction in the hole-doped regime and reducing the contact transparency. This challenges the device implementation that exploits graphene's bipolarity. To address this limitation, we developed a new fabrication scheme for two-dimensional superconducting contacts that allows independent control over charge concentration and polarity for both the graphene in contact with superconductors and the graphene channel. Contact transparency, conductance enhancement, and Josephson coupling were measured to confirm transparent contacts with both polarities of graphene. Moreover, we demonstrated the Andreev process in the quantum Hall edge state at a negative filling factor of ν = −2. This scheme will open up avenues for realizing various theoretical propositions using the bipolarity of graphene combined with superconductivity.

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Evidence for chiral supercurrent in quantum Hall Josephson junctions

Cited by 12 publications

References 43 publications

Decoupled High‐Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Deposition

Decoupled High‐Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Deposition

Edge supercurrent in Josephson junctions based on topological materials

Engineering Superconducting Contacts Transparent to a Bipolar Graphene

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