2012
DOI: 10.1002/pssa.201100324
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Evidence for fractional filling in ultrathin GaInN/GaN multiple‐quantum wells

Abstract: The (Ga1 − xInxN)Nw/GaN single‐ and multiple‐quantum wells (SQWs, MQWs) are theoretically investigated using the sp3s* tight‐binding (TB) method, with inclusion of spin–orbit coupling. Because of the huge mismatch in both the lattice constant and the energy gap between the constituent materials, two trends are shown to clearly put on display: (i) the existence of two types of confinement characters inside the deep wells of GaInN. The bound states at the bottom of the well are found to be singlets and to follow… Show more

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