We present structural, electrical, and thermoelectric
potential
measurements on high-quality single crystals of ZrTe1.8 grown from isothermal chemical vapor transport. These measurements
show that the Te-deficient ZrTe1.8, which forms the same
structure as the nonsuperconducting ZrTe2, is superconducting
below 3.2 K. The temperature dependence of the upper critical field
(H
c2) deviates from the behavior expected
in conventional single-band superconductors, being best described
by an electron–phonon two-gap superconducting model with strong
intraband coupling. For the ZrTe1.8 single crystals, the
Seebeck potential measurements suggest that the charge carriers are
predominantly negative, in agreement with the ab initio calculations.
Through first-principles calculations within DFT, we show that the
slight reduction of Te occupancy in ZrTe2 unexpectedly
gives origin to density of states peaks at the Fermi level due to
the formation of localized Zr-d bands, possibly promoting
electronic instabilities at the Fermi level and an increase at the
critical temperature according to the standard BCS theory. These findings
highlight that the Te deficiency promotes the electronic conditions
for the stability of the superconducting ground state, suggesting
that defects can fine-tune the electronic structure to support superconductivity.