2016
DOI: 10.1063/1.4962394
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Evidence for room-temperature in-diffusion of nickel into silicon

Abstract: Interstitial nickel in crystalline Si is shown to be a fast diffuser at room temperature. In this study, Ni is incorporated in Si by wet chemical etching in nickel-contaminated alkaline solutions. Nickel in-diffusion is observed by means of detecting the electrically active NiVO defect, which is formed due to Ni capture to the vacancy–oxygen complex in electron-irradiated Si. The depth profiles of the NiVO concentration measured by the deep-level transient spectroscopy technique extend to ∼15 μm in the samples… Show more

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Cited by 15 publications
(23 citation statements)
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“…Comparison with Cz‐Si : The DLTS peak of Ni V O, the complex formed as a result of Ni and A‐center interaction, was shown to appear at ≈180 K too . In the FZ samples this peak is hidden in the much stronger Ni V P signal.…”
supporting
confidence: 65%
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“…Comparison with Cz‐Si : The DLTS peak of Ni V O, the complex formed as a result of Ni and A‐center interaction, was shown to appear at ≈180 K too . In the FZ samples this peak is hidden in the much stronger Ni V P signal.…”
supporting
confidence: 65%
“…However, the parameters of the dominant centers in each sample were obtained with acceptable accuracy from the unresolved LDLTS spectra. For example, the activation energy and capture cross section measured in this work for the Ni V O complex are nearly identical to those obtained in the lower‐doped samples where the V P center concentration was negligible …”
supporting
confidence: 62%
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