Evidence for the Eu 4f Character of Conduction-Band Edge at the Eu2O3 Surface Studied by Scanning Tunneling Spectroscopy

Lehtiö, Juha‐Pekka; Hadamek, Tobias; Kuzmin, M.; Laukkanen, P.; Demkov, Alexander A.

doi:10.1016/j.susc.2020.121763

Cited by 5 publications

(4 citation statements)

References 24 publications

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“…The analysis of morphologies of these surfaces was performed by roughness distributions obtained from STM data in Figure . This approach is described in more detail in the literature. , The distributions of tip heights acquired in measuring the STM images (filled circles) are shown in Figure . It is seen that each curve can be fitted with a single Gaussian peak.…”

Section: Resultsmentioning

confidence: 99%

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Atomic-Scale Modification of Oxidation Phenomena on the Ge(100) Surface by Si Alloying

et al. 2021

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Properties of Ge oxides are significantly different from those of widely used Si oxides. For example, the instability of GeO x at device junctions causes electronic defect levels that degrade the performance of Ge-containing devices (e.g., transistors and infrared detectors). Therefore, the passivating Si layers have been commonly used at Ge interfaces to reduce the effects of Ge oxide instability and mimic the successful strategy of Si oxidation. To contribute to the atomic-scale knowledge and control of oxidation of such Si-alloyed Ge interfaces (O/Si/Ge), we present a synchrotron radiation core-level study of O/Si/Ge, which is combined with scanning probe microscopy measurements. The oxidation processes and electronic properties of O/Si/Ge(100) are examined as functions of Si amount and oxidation doses. In particular, the incorporation of Si into Ge is shown to cause the strengthening of Ge–O bonds and the increase of incorporated oxygen amount in oxide/Ge junctions, supporting that the method is useful to decrease the defect-level densities.

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Section: Resultsmentioning

confidence: 99%

“…This approach is described in more detail in the literature. 22 , 46 The distributions of tip heights acquired in measuring the STM images (filled circles) are shown in Figure 11 . It is seen that each curve can be fitted with a single Gaussian peak.…”

Section: Resultsmentioning

confidence: 99%

Atomic-Scale Modification of Oxidation Phenomena on the Ge(100) Surface by Si Alloying

et al. 2021

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“…Samarium derivatives are a class of semiconductors with proven applicability in solar cells, biochemical sensors and nanomagnets [22][23][24][25], because of the high activity of samarium with unique electronic configuration [Xe] 6s2 4f6 [26][27][28].…”

Section: Introductionmentioning

confidence: 99%

Samarium Cuprate with Micron-Size Pores for Drug Sensing

Korina,

Karaberova,

Bulatova

et al. 2024

Preprint

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Quick and robust analytical methods are of vital necessity in medicine and biology, making the synthesis of the electroactive substrates for the sensing of medically relevant chemicals a promising area of material science. Rare earth cuprates, mostly famous for high-temperature superconductivity, continue to exhibit encouraging electroactivity toward surface selective oxidation of biologically active compounds. Samarium cuprate reported in this paper showed developed surface with unique porous morphology and good conductivity – a set of prerequisites for sensing material. Further studies confirmed excellent samarium cuprate-based carbon paste electrode sensitivity of enalapril maleate and helped to develop an analytical method with selectivity and stability applicable for wider use.

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“…Out of such distinct phases, Eu atoms in the sesquioxide (Eu 2 O 3 ) consist the highest possible oxidation state which leads to its peculiar properties and applications such as red or blue phosphor in fluorescent lamps, high luminous intensity, long luminous life and high degree of color purity in emitted light. It has unique electronic transitions which lead to its potential utilities in optical fiber amplifiers, opto-electronic devices, LED displays, sensors and lasers, etc [1][2][3]. Among earlier significant studies, Lopez-Aguilar et al [4] have analyzed correlation effects in the band structure of Eu 2 O 3 in metallic and semiconducting phases using augmented plane wave (APW) method.…”

Section: Introductionmentioning

confidence: 99%

Electronic properties of EuO and Eu₂O₃: FP-LAPW and LCAO computations and Compton spectroscopy strategies

Meena¹,

Meena²,

Ahuja³

et al. 2023

Phys. Scr.

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Spin projected energy bands and density of states (DOS) have been deduced using full potential linearized augmented plane wave (FP-LAPW) with density functional theory (DFT) to analyze the electronic properties of EuO and Eu2O3. Whereas the Mulliken population (MP) and Compton profiles (CPs) for both the compounds have been computed using linear combination of atomic orbitals (LCAO) with pure and hybrid DFT (WC1LYP) schemes. The MP analysis indicates EuO to be more covalent than Eu2O3. Our first ever CP measurements for Eu2O3 (using 20 Ci 137Cs Compton spectrometer) indicate DFT with generalized gradient approximation and WC1LYP as successful prescriptions for predicting the electronic properties of such rare-Earth oxides. In addition, equally normalized experimental CPs of Eu2O3 are compared with other rare-Earth oxides RE2O3 (RE = Nd, Sm, Er and Yb) to decide an overall trend of localisation of f-electrons. A metallic behaviour of Eu2O3 is observed on the basis of real-space analysis of experimental, LCAO and free electron theory based CPs of Eu2O3.

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Evidence for the Eu 4f Character of Conduction-Band Edge at the Eu2O3 Surface Studied by Scanning Tunneling Spectroscopy

Cited by 5 publications

References 24 publications

Atomic-Scale Modification of Oxidation Phenomena on the Ge(100) Surface by Si Alloying

Atomic-Scale Modification of Oxidation Phenomena on the Ge(100) Surface by Si Alloying

Samarium Cuprate with Micron-Size Pores for Drug Sensing

Electronic properties of EuO and Eu₂O₃: FP-LAPW and LCAO computations and Compton spectroscopy strategies

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Evidence for the Eu 4f Character of Conduction-Band Edge at the Eu2O3 Surface Studied by Scanning Tunneling Spectroscopy

Cited by 5 publications

References 24 publications

Atomic-Scale Modification of Oxidation Phenomena on the Ge(100) Surface by Si Alloying

Atomic-Scale Modification of Oxidation Phenomena on the Ge(100) Surface by Si Alloying

Samarium Cuprate with Micron-Size Pores for Drug Sensing

Electronic properties of EuO and Eu2O3: FP-LAPW and LCAO computations and Compton spectroscopy strategies

Contact Info

Product

Resources

About

Electronic properties of EuO and Eu₂O₃: FP-LAPW and LCAO computations and Compton spectroscopy strategies