Evidence for the formation of ordered layers on SeS2 treated GaAs(110) using atomic force microscopy

Abstract

The wet chemical treatment using SeS2 is an inexpensive and simple method of depositing selenium on GaAs surfaces. This treatment improves the electronic properties of the surface as seen from the increase in photoluminescence intensity. We present our results on surface structural investigations of GaAs(110) surface passivated by SeS2 treatment using atomic force microscopy. Our results show that SeS2 treatment can passivate the GaAs(110) surface forming ordered overlayers on it.

Chemical bonding and electronic properties of SeS2-treated GaAs(100)

“…Previous workers in this field have reported ordered surfaces after SeS 2 passivation also indicating a smooth conformal reaction front during passivation. 37 In lieu of higher resolution measurements not available to the present study, we will work with the assumption of a smooth, conformal passivation surface.…”

“…9 A stable Se-based passivation layer can be produced on the GaAs͑100͒ surface by contact with a SeS 2 solution. [19][20][21][22] This treatment appears to be very effective in forming Se-based species on GaAs surface and in improving the electronic properties through the formation of a thermally and chemically stable passivating layer. 2 As in many other cases of chemical-based surface passivation, the underlying passivating mechanism of the SeS 2 -treated GaAs͑100͒ surface still is not clearly understood.…”

Effect of SeS2 treatment on the surface modification of GaAs and adhesive wafer bonding of GaAs with Silicon

“…Sulfur passivated GaAs surface was shown to degrade the bulk property of GaAs when exposed to air [1,2]. But, SeS 2 has been reported to be an alternate passivating agent for GaAs [3]. The wet chemical treatment using SeS 2 is a too cheap and simple method of depositing selenium sulphide on GaAs surface.…”

“…XRD treatment is to be a very effective tool to identify phases of SeS 2 on GaAs surface with the formation of chemically and thermally stable passivating layer. There are reports available for bulk GaAs passivated with SeS 2 [3,7,8]. Bulk GaAs surface modification studies like interface states on the surface and substrate smoothness are yet to be analyzed.…”

“…Bulk GaAs surface modification studies like interface states on the surface and substrate smoothness are yet to be analyzed. The SeS 2 captured layers on GaAs can reduce the disorder induced interface states because of lattice matching [3] when bonded with other substrates such as silicon. SEM also analyzes the wafer-bonded interface and passivation morphology by specific chemical treatment time.…”