2010
DOI: 10.1016/j.cplett.2010.05.002
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Evidence of covalent bond formation at the silane–metal interface during plasma polymerization of bis-1,2-(triethoxysilyl)ethane (BTSE) on aluminium

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Cited by 21 publications
(11 citation statements)
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“…Furthermore, it is assumed that Si-O-Me covalent bonds are generated in a similar way, which is indirectly supported by the observed adhesion strength improvement (for additional support, see ref. [43] ). The conventional mechanism for a sol-gel siloxane film formation (wet chemistry approach) is well known and reported in several papers.…”
Section: Discussionmentioning
confidence: 93%
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“…Furthermore, it is assumed that Si-O-Me covalent bonds are generated in a similar way, which is indirectly supported by the observed adhesion strength improvement (for additional support, see ref. [43] ). The conventional mechanism for a sol-gel siloxane film formation (wet chemistry approach) is well known and reported in several papers.…”
Section: Discussionmentioning
confidence: 93%
“…[40][41][42] A plasma deposited siloxane layer can act as an interfacial modifier for improving adhesion and corrosion resistance creating chemical bonds between the siloxane and metal interface. [43] The deposition of polyhydrogenmethylsiloxane and tetraethyl orthosilicate on SS substrates improved the adhesion strength towards silicon elastomers. [44] The main goal of this study is to deposit a siloxane layer on a SS surface through DBD process.…”
Section: Introductionmentioning
confidence: 99%
“…18,[20][21][22][23][24][25][26][27][28][29][30] The terminal OH groups of the oxihydroxide metallic surface react with silanes that undergo hydrolysis forming polysiloxane (Si-O-Si) bonds and Si-O-substrate bonds. 31,32 The formation of a robust bond of the silanes with the substrate confers a strong stability to the layer and allows further chemical functionalization. 33 Although the best substrates for silane functionalization are those containing Si-OH moieties, metallic oxides are also suitable.…”
Section: Introductionmentioning
confidence: 99%
“…In several studies, SiOM + fragments (M represents Al, Fe or Zn) have been interpreted as direct evidence for covalent Si−O−M bond formation at the metal oxide−silane interface, both for direct access interfaces 5,40,41 and for buried interfaces. 6,7,42 However, the interpretation that SiOM + fragments can be considered as a proof for covalent bonding is under discussion. 43 In our analysis, it is remarkable in the NMF analysis (Figure 4) that SiOFe + is a highly characteristic fragment for the substrate component, as well as for the interface component.…”
Section: Resultsmentioning
confidence: 99%